The laboratory, established in 2010, enables comprehensive physical and chemical characterization of surfaces and volumes of materials and structures produced at the micro- and nanometer scale. Its modern equipment allows for observations and analysis of the morphology (e.g. topography, structure) of surfaces as well as their surface and bulk chemical composition.
This enables studies on important features of both materials (semiconductor, dielectric and conductive, those already used or envisioned for applications in electronics), as well as structures and devices manufactured from them, including micro- and nano-electronics, photonics, hybrid microsystems, as well as MEMS and MOEMS systems.
The laboratory performs precise measurements of current-voltage (I-V), capacitance-voltage (C-V) characteristics and measurements of thermally induced current (TSC - Thermally Stimulated Current) in the temperature range of the substrate of 10K - 300K.
Equipment:
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Dektak 150 VEECO profilometer - a device enabling measurements of surface profile (i.e. its topography, faults) along arbitrary line. Vertical resolution (z) – several nm, horizontal resolution (x-y) – 1 m.
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Scanning Electron Microscope (SEM) HITACHI S-3400N enabling observations of topography and surface structure. Magnification – up to 300,000 times. Resolution – submicrometer. Possibility of angled observation of the sample. No sample preparation required. Analysis of elemental composition of the surface using the Energy Dispersive X-ray Spectroscope (EDS).
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OLYMPUS LEXT OLS3100 confocal laser scanning microscope enabling imaging of 2D and 3D samples. Magnification – up to 14,400 times. Vertical resolution (z) – 10 nm, horizontal resolution (x-y) – 120 nm.
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Secondary Ion Mass Spectrometer (SIMS) MILLBROOK MiniSIMS enables analyses of chemical composition of samples in static, surface mapping and dynamic modes (sample digestion and depth profiling of chemical composition). Resolution (ion beam f: <10 mm for conductive materials and <50 mm for non-conductive materials).
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High-frequency (10 MHz - 13.5 GHz) impedance analyzer AGILENT N4395A used to determine electrophysical parameters of electronic materials in the range of radio frequencies (RF) and microwave (MW) electromagnetic radiation.
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Automatic probe station for measuring I-V and C-V characteristics of semiconductor structures.
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JANIS CCR10 probe station for cryogenic measurements, operating in the temperature range of 10K-300K.
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Station for measuring I-V characteristics of high-voltage semiconductor structures (3.3 kV).
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KEYSIGHT B2985A picoammeter with voltage source.
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KEITHLEY SCS4200 system for electrical measurements of semiconductor structures.
The laboratory is located in the Electrical Engineering Building (GE), entrance A, room no. 421.
Supervisor: Mariusz Sochacki, PhD, DSc