Equipment:
- KEITHLEY 4200-SCS system for characterization of semiconductor devices containing five static source measurement units (4210-SMU), including two equipped with a preamplifier (4200-PA) ensuring measurement of currents in the range of up to 1 pA (with an accuracy of 1% of rdg + 10 fA), small-signal unit (4210-CVU) and two-channel pulse unit (4225-PMU) with two remote ultra-fast switches (4225-RPM);
- KEYSIGHT B1500A semiconductor device characterization system;
- HP 4285A LCR meter;
- KEITHLEY 237 SMU unit (High Voltage SMU);
- low-noise, fully shielded Suss PM-8 manual probe station equipped with six precise manipulators with needles with a diameter of 3, 5, 7 and 20 μm;
- cooling unit (chiller), which, in combination with a heated measuring table, enables instrument measurements in the temperature range from -60°C to 200°C;
- HORIBA JOBIN-YVON Uvisel 2 spectroscopic ellipsometer enabling measurements of optical properties of layers and layered systems in the wavelength range of 190-850 nm;
- THETAMETRISIS reflectometer for measuring optical properties of thin films (thickness, transmittance, reflectance);
- four-point probe for measuring resistivity/resistance and conductivity of conductive materials.
Measurement capabilities:
- static characteristics (I-V) with current or voltage sourcing;
- endurance measurements (breakdown voltage) in the range from 0 to 1000 V;
- stress-and-sense static characteristics (voltage or current stress, voltage or current response);
- measurement of small resistances using the four-pin method in a full-Kelvin connection;
- quasi-static C-V measurements;
- admittance measurements (C-G-V, C-R-V) in a very low frequency range regime (1 mHz - 10 Hz);
- small-signal admittance characteristics (C-G-V, C-R-V) in the frequency range of 75 kHz – 30 MHz with a step of 100 Hz;
- small-signal characteristics C-V, G-V and R-V in the frequency range of 1 kHz – 10 MHz with a step of 10/decade;
- general purpose ultrafast I-V measurements;
- measurements using the charge pumping method.
Location: Institute of Microelectronics and Optoelectronics, Division of Microelectronics and Nanoelectronics Devices, Faculty of Electrical Engineering Building, 3rd floor
Supervisor: Robert Mroczyński, BEng, PhD, DSc