Marcin Wiśniewski
supervisor: Wojciech Wojtasiak
The main goal of research is to develop a design method of power amplifiers with GaN HEMT (High Electron Mobility Transistors) T/R (Transmit/Receive) modules of AESA (Active Electronically Scanned Array) radars. The method will include usage of the technology of NML (Nonuniform Microstrip Lines) in amplifier matching networks. The research concerns a nonuniform microstrip line with shape changing continuously toward the direction of wave propagation.
Power amplifier is a crucial element of T/R module of radar which defines many of its parameters. It is assumed that the developed design method will allow fabrication of amplifiers characterized by high output power, high efficiency, linearity and robustness even in extremely demanding environment. Two of the greatest challenges concern development of electro-thermal GaN HEMT model and modeling of nonuniform microstrip lines for which ECAD tools as ADS (Advanced Design System) and CST Studio Suite will be used.
Given that this doctorate is of industrial-type, an equal emphasis will be placed on performing computation, simulation and device prototyping. The device must be adapted for serial production and military use, therefore properties like invariance of electrical parameters, operating temperature, shock resistance, EMC compatibility and MTBF (Mean Time Between Failures) will be taken care off.