HIPIMS based thin film technology for resistive random-access memory application

Piotr Różański

supervisor: Robert Mroczyński



This work is devoted to the technology and characterization of thin films fabricated employing reactive magnetron sputtering using HIPIMS discharge. These materials include metal oxides such as zyrkonium oxide (ZrOx), hafnium oxide (HfOx), titanium oxide (TiOx) and aluminum oxide (AlOx) . The investigated materials play several important functions in various types of devices for novel electronic and photonic devices. The ultimate goal of this work is the examination of mutual dependences between the input parameters of the fabrication process (technological parameters) and the output parameters (properties of the obtained materials) to obtain ultrathin layers for the application of the MIM (Metal-Insulator-Metal) structures. Those structures are the basis of resistive random-access memory (RRAM) devices. In the first part of this work, optical properties of the fabricated materials will be examined and compared to the layers deposited through the typical pulsed-DC processes. Several oxide materials will be characterized in terms of thickness, refractive indices, transmittance, and reflectance in the UV-VIS range. In order to monitor the stoichiometry of the oxide layers, MIS structures will be fabricated. The analysis of the obtained electrical characteristics will be performed. The results of the electrical characterization of the fabricated test structures will be described indicating concluding remarks on the feasibility of applying the studied structures in RRAM devices.