Microelectronics & NanoelectronicS Devices
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1993 1994 1995 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006
Papers in Scientific Journals 1. A. Zaręba, L. Łukasiak, A. Jakubowski, "The influence of selected material and transport parameters on the accuracy of modeling Early voltage in SiGe-Base HBT", IEEE Transactions on Electron Devices, vol.53 No 8, (2006) 1946-1948. 2. M. Ćwil, P. Konarski, T. Bieniek, R.B. Beck, "Si-oxide/Si and Si-oxynitride/Si interfaces analysed Physics Status Solidi (a), No 9 (2006) 220-2204. 3. L. Łukasiak, A. Jakubowski, R.B.Beck, Z. Pióro, "Krzemogerman SiGe w mikroelektronice", Elektronika, 4/2006 (2006) 34-37. 4. B. Majkusiak, J. Walczak, "Simulation of the gate tunnel current in the double gate (DG) MOS transistor", Journal of Computational Electronics, 5 (2006) 143-148. 5. P.Firek, R.Mroczyński, J.Szmidt, R.Beck, A.Werbowy, "Modifying electrophysical properties of Si-CBN interface by introduction of ultrathin dielectric", Inżynieria Biomateriałów, z.56-57 (2006) 27 - 29. Conference presentations 6. B.Majkusiak, "Modeling the inelastic scattering effect on the resonant tunneling current" 11th International Workshop on Computational Electronics, (2006) 271 - 272. 7. M.Sakowicz, J.Łusakowski, K.Karpierz, M.Grynberg, B.Majkusiak, R.Tauk, A.Tiberj, W.Knap, Z.Bougrioua, T.Skotnicki "Electron mobility and concentration on submicrometer scale - investigation of Si and AlGaN/GaN field effect transistors by AC magnetoresistance method", 28th International Conference on Physics of Semiconductors, (2006). 8. B.Majkusiak, "Steady-state in the double gate MOS resonant tunneling diode", EUROSOI 2006 - Proceedings of 2nd Workshop, (2006). 9. B.Majkusiak, "Resonance tunneling devices on SOI basis", NATO Advanced Research Workshop Nanoscaled Semiconductor-on-Insulator Structures and Devices, (2006) 75 - 76. 10. M.Sakowicz, J.Łusakowski, K.Karpierz, M.Grynberg, B.Majkusiak, "Alternating Current Magnetoresistance Studies of Si MOSFETs", XXXV International School on Physics of Semiconductor Compounds, (2006). Course book in Polish 11. R.Beck, K.Bracławski, J.Gibki, T.Janik, M.Jurczak, J.Maciak, A.Siennicki, A.Werbowy, A.Zaręba, "Laboratorium przyrządów półprzewodnikowych - praca zbiorowa pod redakcją Jana Szmidta i Agnieszki Zaręby", Oficyna Wydawnicza PW, Warszawa (2006). Back to top
Papers in Scientific Journals 1. M. Sochacki, R. Łukasiewicz, W. Rzodkiewicz, A. Werbowy, J. Szmidt, E. Staryga, "Silicon dioxide and silicon nitride as a passivation and edge termination for 4H-SiC Schottky diodes", Damond & Related Materials, 14 (2005) 1138-1141. 2. M. Słapa, J. Szmidt, A. Szczęsny, P. Śniecikowski, W. Czarnacki, M. Dudek, M. Traczyk, A. Werbowy "Ultra-thin nanocrystalline diamond detectors", Damond & Related Materials, 14 (2005) 125-128. 3. M. Sochacki, A. Kolendo, J. Szmidt, A. Werbowy "Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures", Solid-State Electronics, 49 (2005) 585-590. 4. T. Bieniek, R.B. Beck, A. Jakubowski, A. Kudła "Analiza skutków ultrapłytkiej implantacji jonów azotu w plazmie w.cz. (13,56 MHz)" Elektronika, 2-3, (2005) 9 -10. 5. A. Szczęsny, E. Kamińska, A. Piotrowska, J. Szmidt "GaN - materiał do konstrukcji przyrządów pracujących przy wysokich częstotliwościach (HEMT) i w ekstremalnych warunkach" Elektronika, 2-3, (2005) 16-17. 6. M. Śmietana, J. Szmidt, M. Dudek "Warstwa diamepntopodobna jako obszar czynny dla czujników światłowodowych" Elektronika, 2-3, (2005) 37-38. 7. J. Stęszewski, A. Jakubowski "Modelowanie charakterystyk I-U tranzystora MOS na węgliku krzemu (4H-SiC oraz 6H-SiC)" Elektronika, 2-3, (2005) 25-26. 8. L.Łukasiak, A. Jakubowski "Analiza wpływu parametrów kanału SiGe na charakterystyki C-U kondensatora MOS" Elektronika, 2-3, (2005) 57-58. 9. R. Mroczyński, M. Cuch, T. Bieniek, R.B. Beck, A. Jakubowski "Stabilność termiczna ultracienkich warstw tlenko-azotków osadzanych metodą PECVD" Elektronika, 2-3, (2005) 62-63. 10. Wł. Grabiński, D. Tomaszewski, L. Lemaitre, A. Jakubowski "Standardization of the compact model coding: non-fully depleted SOI MOSFET example" Journal of Telecommunication and Information Technology, 1, (2005) 135-141. 11. T. Bieniek, R.B.Beck, A. Jakubowski, A. Kudła "Ultra-shallow nitrogen plasma implantation for ultra-thin silicon oxynitride (SiOxNy) layer formation" Journal of Telecommunication and Information Technology, 1, (2005) 70-75. 12. P. Firek, A. Werbowy, J. Szmidt, A. Olszyna "Properties of Al. Contacts to Si surface exposed in the course of plasma etching of previously grown nanocrystalline c-BN film" Journal of Telecommunication and Information Technology, 1, (2005) 76-80. Conference presentations 13. D. Tomaszewski, L.Łukasiak, S. Magierowski, K. Iniewski, “2-D Numerical Modeling of MOFSET Varactors for Application in High-Speed Voltage Controlled Oscillators”, Proc. of the 12th International Conference: "Mixed Design of Integrated Circuits and Systems MIXDES'2005, Kraków, June 2005, 873-876 14. R. B. Beck, P. Grabiec, R. Paszkiewicz, “Krzem i jego związki - nieklasyczne zastosowania”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 41-48 15. T. Bieniek, R.B. Beck, A. Jakubowski, A. Kudła, “Analiza skutków ultrapłytkiej implantacji jonów azotu w plaźmie w.cz. (13,56 MHz)”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 69-72 16. P. Firek, A. Werbowy, P. Konarski, J. Szmidt. A. Olszyna, “Właściwości elektryczne warstw nanokrystalicznego c_BN w podwyższonych temperaturach”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 93-96 17. T. Guzdek, J. Szmidt, Piotr Niedzielski, M. Dudek, “Warstwy NCD jako chemoczułe dielektryki bramkowe w strukturach OpenGateFET”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 117-120 18. M. Sochacki, R. Łukasiewicz, J. Szmidt, W. Rzodkiewicz, M. Leśko, M. Wiatroszak, “Warstwy termicznego SiO2 i Si3N4 na węgliku krzemu (4H-SiC) dla przyrządów mocy MS i MIS”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 209-212 19. A. Szczęsny, E. Kamińska, A. Piotrowska, J. Szmidt, “GaN - Materiał dla konstrukcji przyrządów pracujących przy wysokich częstotliwościach (HEMT) i w ekstremalnych warunkach”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 221-223 20. M. Słapa, A. Szczęsny, P. Śniecikowski, J. Szmidt, W. Czarnacki, M. Traczyk, M. Dudek, “Nanocrystalline diamond films for detector applications”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 233-236 21. M. Śmietana, J. Szmidt, M. Dudek, “Warstwa diamentopodobna jako obszar czynny dla czujników światłowodowych”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 259-262 22. J. Żelazko, J. Szmidt, W. Gębicki, “Influence of technological parameters of plasma deposition on property of dielectric carbon layers”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 253-257 23. L. Łukasiak, A. Jakubowski, R.B.Beck, Z. Pióro, “Krzemogerman (SiGe) w mikroelektronice”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 289-296 24. B. Majkusiak, “Przyrządy elektroniki pojedynczego elektronu”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 297-307 25. R. Mroczyński, M. Cuch, T. Bieniek, R.B. Beck, A. Jakubowski, “Stabilność termiczna ultracienkich warstw tlenko-azotków osadzanych metodą PCVD”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 325-328 26. T. Bieniek, R.B. Beck, A. Jakubowski, A. Kudła, “Wytwarzanie ultracienkich warstw SiO2 za pomocą niskotemperaturowego utleniania w plaźmie w.cz.”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 329-332 27. J. Gibki, L. Łukasiak, A. Jakubowski, “Pomiary tranzystorów SiGe w niskich temperaturach”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 333-336 28. A. Linkowski, L. Łkasiak, A. Jakubowski, “Modelowanie wpływu parametrów tranzystora HBT z bazą SiGe na prędkość nośników w bazie przy użyciu symulatora APSYS 2000”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 365-368 29. L. Łukasiak, J. Grabowski, P. Nowek, K. Stankiewicz, R.B.Beck, A. Jakubowski, “Controller for muti-step technological processes”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 373-376 30. L. Łukasiak, A. Jakubowski, “Investigation of the influence of SiGe channel parameters on the CV characteristics of a MOSCAP”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 377-380 31. L. Łukasiak, A. Jakubowski, D. Tomaszewski, “Modeling I-V characteristics of a p-MOSFET with a SiGa channel”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 381-384 32. L. Łukasiak, A. Jakubowski, D. Tomaszewski, “Modeling MOS Capactor with SiGe Gate”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 385-388 33. L. Łukasiak, A. Jakubowski, “Modeling CV characteristics of a MOS “structure with strained-Si channel, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 389-392 34. B. Majkusiak, J. Walczak, “Study of resonant tunnelin of elctrons in the silicon DG MOS transistor”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 397-401 35. J. Stęszewski, A. Jakubowski, “Modeling I-V characteristics of 4H-SiC and 6H-SiC MOSFETs”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 445-448 36. S. Szostak, L. Łukasiak, R.B. Beck, A. Jakubowski, “Charakteryzacja tranzystorów MOS z kanałem SiGe metodą pompowania ładunku”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 449-452 37. S. Szostak, R.B. Beck, L. Łukasiak, A. Jakubowski, “Zastosowanie metody pompowania ładunku do charakteryzacji struktur MIS z ultracienką warstwą Si3N4”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 453-456 38. A. Zaręba, L. Łukasiak, A. Jakubowski, “Modeling of energy band diagram and junction capacitance of HBT transistor with graded sige base”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 479-482 39. A. Zaręba, L. Łukasiak, A. Jakubowski, “The importance of the carrier velocity saturation in the base on the modeling of SIGE-BASE HBT”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 483-486 40. J. Walczak, B. Majkusiak, “Phonon-Limited Electron Mobility in Ultrathin Double-Gate Strained-Si/Si(1-x)Gex/Strained-Si Field effect Transistor”, VIII Krajowa Konferencja Naukowa "Technologia Elektronowa" ELTE'2004, Stare Jabłonki, 2005, 487-490 41. J. Szmidt, A. Szczęsny, M. Sochacki, P. Śniecikowski, “Silicon carbide, diamond nitride and diamond as alternative semiconductors for microelectronics”, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane , 28.06.-1.07.2005, 69 42. T. Guzdek, M. Dudek, J. Szmidt, P. Niedzielski, “Chemoselectivity of the surface of NCD layer in a sensor applications”, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane , 28.06.-1.07.2005, 70 43. T. Bieniek, R.B. Beck, A. Jakubowski, P. Konarski, M. Cwil, P. Hoffmann, D. Schmeisser, “Formation of oxynitride layers in R.F. plasma planar structure Si and SiC MOS structures”, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane , 28.06.-1.07.2005, 89-90 44. A. Werbowy, P. Firek, A. Olszyna, N. Kwietniewski, J. Szmidt, “Plasma sputter deposition and properties of BaTiO3 films”, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane, 28.06.-1.07.2005, 104 45. M. Jakubowska, P. Firek, E. Zwierkowska, J. Szmidt, A. Werbowy, “Investigation of c-BN thick film layers on silicon substrates “, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane, 28.06.-1.07.2005, 105 46. P. Firek, R. Mroczyński, J. Szmidt, R.B. Beck, A. Werbowy, “Modyfying of Si-CBN interface electrophysical properties by introduction of ultrathin dielectric layer”, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane, 28.06.-1.07.2005, 106 47. M. Kalisz, R.B. Beck, A. Kudła, P. Konarski, “Modification of silicon dioxide properties by RF CF4 and CF4:O2 plasmas”, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane, 28.06.-1.07.2005, 116-117 48. M. Sochacki, P. Śniecikowski, J. Szmidt, R. Łukasiewicz, A. Kubiak, “Low energy boron implantation in 4H-SiC”, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane, 28.06.-1.07.2005, 143 49. J. Stęszewski, M. Sochacki, A. Jakubowski, J. Szmidt, A. Werbowy, “Modeling electrical characteristics of devices on silicon carbide”, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane, 28.06.-1.07.2005, 144-146 50. R. Łukasiwicz, B. Cholewa, M. Sochacki, E. Kamińska, A. Piotrowska, J. Szmidt, E. Dynowska, J. Ratajczak, “Characterization of NI-Based low resistivity ohmic contacts on n-Type 4H-SiC”, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane, 28.06.-1.07.2005, 147 51. A. Szczęsny, E. Kamińska, A. Piotrowska, K. Gołaszewska, R. Łukasiwicz, R. Mroczyński, J. Szmidt, “Ru-Si-O/AIN, Si3N4 Schottky contacts for n-Type GaN and AIGaN”, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane, 28.06.-1.07.2005, 151 52. M. Mirkowska, E. Dusiński, K. Zdunek, J. Szmidt, “Carbon nitride layers obtained by impulse plasma deposition method for electronics applications”, International Conference 4th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane, 28.06.-1.07.2005, 166 53. B. Majkusiak, “Theoretical investigation of the resonant tunneling currents in the double gate SOI structure”, EUROSOI'2005 First Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, Granada Spain, 2005, 63-64 54. B. Majkusiak, J. Walczak, “Silicon resonant tunneling devices - theoretical study”, CNI - Ceter of Nanoelectronic Systems for Information Technology (Nanoelectronics Days 2005), Forschungszentrum Jülich, 2005, 83-84 55. T. Guzdek, J. Szmidt, M. Dudek, P. Niedzielski, “NCD Layers as Material for Chemosensitive Structures Operated in High Ambient Temperature”, MICROTHERM’2005 International Conference Microtechnology and Thermal Problems in Electronics, Lódź, 2005, 9-13 56. A. Szczęsny, E. Kamińska, A. Piotrowska, K. Gołaszewska, R. Łukasiewicz, “AlGaN/GaN HEMT for High Temperature Applications – Thermally Stable Shottky Contacts Formation”, MICROTHERM’2005 International Conference Microtechnology and Thermal Problems in Electronics, Łódź, 2005, 14-18 Contributions to books 57 B. Majkusiak, J. Walczak “Theoretical Limit for the SiO2 Thickness in Silicon MOS Devices” in: “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment”, D. Flandre et al. (eds.); Kluwer Academic Publishers, Printed in the Netherlands, 2005 58. M. Śmietana, J. Szmidt, M. Dudek “Application of Diamond-Like Carbon Film Optical Waveguide Sensing System” in: “Innovative superhard Materials and Sustainable Coatings for Advanced Manufacturing”, J. Lee and N. Novikov (eds.); Springer, Printed in the Netherlands, 2005 59. P. Firek, A. Werbowy, J. Szmidt, P. Konarski, A. Olszyna “Influence of the Temperature on Electronic Properties of Carbon-Rich BN Films Obtained from (C2H5)3B by Means of Reactive Pulse Plasma Method” in: “Innovative superhard Materials and Sustainable Coatings for Advanced Manufacturing”, J. Lee and N. Novikov (eds.); Springer, Printed in the Netherlands, 2005Back to top
Papers in Scientific Journals 1. M. Sochacki, J. Szmidt “Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes” Thin Solid Films, 446, (2004) 106-110 2. B. Majkusiak “Comparison of resonant tunnelling currents in double gate MOS diodes with metal and poly-silicon gates” Microelectronics Engineering, 1, (2004) 96-100 3. M. Godlewski, J.Szmidt,A.Olszyna, A.Werbowy, E. Łusakowska, M.R.Philips, E.M.Goldys, A.Sokołowska “Luminescent properties of wide bangap materials at room temperature” Physica Status Solidi, 1 (2), (2004) 213-218 4. A.Werbowy, A.Olszyna,K.Zdunek, A.Sokołowska,J.Szmidt,A.Barcz “Pecularities of thin film deposition by means of reactive impulse plasma assisted chemical vapor deposition (RIPACVD) method” Thin Solid Films, 459, (2004) 160-164 5. T.Guzdek, J.Szmidt, M.Dudek, P.Niedzielski "NCD film as an active gate layer in chemFET structures" Diamond and Related Materials, 13, (2004) 1059-1061 6. M. Śmietana, J.Szmidt, M.Dudek, P.Niedzielski “Optical properties of diamond-like cladding for optical fibres” Diamond and Related Materials, 13, (2004) 954-957 7. P. Hoffmann, D. Schmeisser, R.B. Beck, M. Cuch, M. Gidź, A. Jakubowski “Photoemission studies of very thin (<10 nm) silicon oxynitride (SiOxNy) layers formed by PECVD” Journal of Alloys and Compounds, 382, (2004) 228 - 233 8. L. Łukasiak, A. Jakubowski, Z. Pióro “Silicon microelectronics: where we have come from and where we are heading” Journal of Telecommunications and Inforation Technology, 1, (2004) 7-14 9. A. Linkowski, L. Łukasiak, A. Jakubowski “Modeling SiGe-base HBT using APSYS 2000 – a 2D simulator” Journal of Telecommunications and Inforation Technology, 1, (2004) 36-38 10. J. Walczak, B. Majkusiak “Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers” Journal of Telecommunications and Inforation Technology, 1, (2004) 39-49 11. R.B. Beck, A. Jakubowski “Ultrathin oxynitride films for CMOS technology” Journal of Telecommunications and Inforation Technology, 1, (2004) 62-69 12. M. Śmietana, J. Szmidt, M.Dudek, P.Niedzielski „Właściwości warstw NCD jako pokryć włókien światłowodowych w zależności od parametrów procesu RF PCVD”, „Properies of diamond-like cladding for optical fibres depending on RF PCVD process parameters” Inżynieria Biomateriałów, (2004) 67-70 13. T. Bieniek, R. Beck, A. Jakubowski, A. Kudła „Wytwarzanie ultracienkich warstw SiO2 za pomocą niskotemperaturowego utleniania w plaźmie w.cz.” Elektronika, 10, (2004) 6 - 7 14. M. Sochacki, R. Łukasiewicz, J. Szmidt, W. Rzodkiewicz, M. Leśko, M. Wiatroszak „Warstwy termicznego SiO2 i Si3N4 na węgliku krzemu (4H-SiC) do przyrządów mocy MS i MIS” Elektronika, 10, (2004) 9 - 10 15. R. Gronau, J. Szmidt, T. Gotszalk, A. Marendziak, P. Konarski, A. Rylski „Zastosowanie technik plazmowych do płytkiej implantacji jonów” Elektronika, 10, (2004) 11 - 12 16. L. Łukasiak, J. Grabowski, P. Nowek, K. Stankiewicz, R. B. Beck, A. Jakubowski „Sterownik do wieloetapowych procesów technologicznych” Elektronika, 10, (2004) 22 - 23 17. A. Linkowski, L. Łukasiak, A. Jakubowski „Modelowanie wpływu parametrów tranzystora HBT z bazą SiGe na prędkość nośników w bazie przy użyciu symulatora APSYS 2000” Elektronika, 10, (2004) 24 - 25 18. A. Jakubowski, L. Łukasiak, Z. Pióro „Półprzewodniki a techniki i technologie informacyjne” Przegląd Telekomunikacyjny, 8-9, (2004) 337-345 Conference presentations 19. J.Weremczuk, M.Chudy, A.Dybko, R.B.Beck, Z.Brzózka, R.Jachowicz ”Array of planar capacitive sensors as a media detector in microfluidic system” 8th International Conf. On Miniaturied Systems for Chemistry and Life Sciences Proc. Of mTAS 2004 Micro Total Analysis System 2004, (2004) 20. M. Smietana, J. Szmidt, P. Niedzielski "Application of Diamond-Like Carbon Film in Optical Waveguide Sensing System" NATO Advanced Research Workshop "Innovative Superhard Materials and Sustainable Coating, May 12-15 2004, Kyiv, Ukraine, (2004) 44 21. P. Śniecikowski, M. Słapa, A. Werbowy, M. Dudek, J. Szmidt "Radiation sensitive nanocrystalline diamond films" NATO Advanced Research Workshop "Innovative Superhard Materials and Sustainable Coating, May 12-15 2004, Kyiv, Ukraine, (2004) 82 22. M. Sochacki, R. Łukasiewicz, W. Rzodkiewicz, A. Werbowy, J. Szmidt "Thermal Oxynitridation of 4H-SiC Surface for Electronic Applications" NATO Advanced Research Workshop "Innovative Superhard Materials and Sustainable Coating, May 12-15 2004, Kyiv, Ukraine, (2004) 83 23. E. Staryga, A. Szczęsny, S. Mitura, J. Szmidt "The Surface Structure of Carbon Films Deposited by RF CVPD Method onto Silicon Substrate" NATO Advanced Research Workshop "Innovative Superhard Materials and Sustainable Coating, May 12-15 2004, Kyiv, Ukraine, (2004) 88 24. P. Firek, A. Werbowy, J. Szmidt, A. Olszyna "Influence of the Temperature on Electronic Properties of Carbon-Rich Films Obtained from (C2H5)3" NATO Advanced Research Workshop "Innovative Superhard Materials and Sustainable Coating, May 12-15 2004, Kyiv, Ukraine, (2004) 89Back to top
Papers in Scientific Journals 1. R.B. Beck, M. Giedz, A. Wojtkiewicz, A.Kudła, A. Jakubowski “PECVD formation of ultrathin silicon nitride layers for CMOS technology” Vacuum, 70 (2003) 323-329. 2. A.Szczęsny, P.Śniecikowski, J.Szmidt, A.Werbowy “Reactive ion etching of novel materials – GaN and SiC” Vacuum, 70 (2003) 249-254. 3. R.B. Beck “Formation of ultrathin silicon oxides – modeling and technological constrains” Materials Science in Semiconductor Processing, 6 (2003) 49-57. 4. J.Szmidt, M.Gazicki-Lipman, H.Szymanowski, R.Mazurczyk, A.Werbowy, A.Kudła “Electrophysical properties of thin germanium/carbon layers produced on silicon using organometallic radio frequency plasma enhanced chemical vapor deposition process” Thin Solid Films, 441 (2003) 192-199. 5. A.Werbowy, K.Zdunek, E.Dusiński, J.Szmidt, M.Elert “Impulse plasma deposition of aluminum oxide layers for Al2O3 / Si, SiC, GaN systems” Surface Coatings Technology, (2003) 174-175. 6. M. Godlewski, J.Szmidt, A. Olszyna, A. Werbowy, E.Łusakowska, M.R. Philips, E.M. Goldys, A. Sokołowska “Luminescent properties of wide bandgap materials at room temperature” Physica Status Solidi (2003). 7. M.Śmietana, J.Szmidt, M.Dudek, P.Niedzielski “Optical properties of diamond-like cladding for optical fibres” Diamond and Related Materials , (2003). 8. T. Guzdek, J. Szmidt, M. Dudek, P.Niedzielski “NDC film as an active gate layer in chemFET structures” Diamond and Related Materials, (2003). 9. A. Werbowy, A.Olszyna, K.Zdunek, A.Sokołowska, J.Szmidt, A.Barcz „Peculiarities of thin deposition by means of reactive impulse plasma assisted chemical vapour deposition (IPD) method” Thin Solid Films, (2003). 10. A. Jakubowski, L. Łukasiak „O telekomunikacyjnych pożytkach z elektroniki wynikających” Elektronika, LXXVI nr 1 (2003) 5-11. 11. M.Sochacki, J.Szmidt, K.Zdunek, E.Dusiński „Diody Schottky’ego na podłożach z węglika krzemu” Elektronika, XLIV nr 7, 3-9. 12. M.Śmietana, J.Kalenik „Głowica światłowodowego czujnika zmian współczynnika załamania lub poziomu cieczy oparta na światłowodzie grubordzeniowym” Elektronizacja, 11 (2003) 34-36. Conference presentations 13. B. Majkusiak, “Theoretical Modeling of the Double Gate MOS Resonant Tunneling Diode” ULSI 2003 4th European Workshop on Ultimate Integration of Silicon University of Udine March, 20-21 (2003) 147-150. 14. R.B. Beck, M. Cuch, A. Wojtkiewicz, A.Kudła, A.Jakubowski “Very thin (<10nm) silicon oxynitride (SiOxNy) layers formed by PECVD” International Symposium Chemical Vapor Depositon XVI and EUROCVD 14, M.D.Allendorf et al. (eds.) “The Electrochemical Society-ECS” Proceedings, vol.2, 1380-1386. 15. J. Walczak, B.Majkusiak “Modeling of Coulomb Scattering of Electrons in Ultrathin Symmetrical DG SOI Transistor” International Symposium Silicon-on-Insulator Technology and Devices XI, S.Cristoloveany et al. (eds.), Proceedings, Vol. 05, 355-360. 16. L. Łukasiak, E.Kamieniecki,A.Jakubowski, J.Rużyłło “Feasibility of surface photo-voltage based characterization of ultra-thin SOI wafers” International Symposium Silicon-on-Insulator Technology and Devices XI, S.Cristoloveany et al. (eds.), Proceedings, Vol. 05, 425-430. 17. D.Tomaszewski, W.Grabiński, L.Lemaitre, A.Jakubowski “Silicon-on-Insulator MOSFET modeling and its verilog-coding” , Proceedings of the 10th Intern. Conf. MIXDES 2003, 105-110. 18. B. Majkusiak “Comparison of resonant tunneling currents in double gate MOS diodes with metal and poly-silicon gates” INFOS 2003 Insulating Films Semiconductors, June 18-20, 2003 Barcelona, Spain, PS12-13. 19. R.Łukasiewicz, J.Szmidtm M.T.Htun Aung “Temperature properties of SiO2 on silicon carbide” 5th Intern.Conf. Thermal Problems in Electronics – Microtherm 2003, June 30 – July 2, Łódź, Poland, 159-164. 20. Z.Lisik, S.Mitura, A.Werbowy, M.Langer, E.Raj, P.Przymusiała “Forced liquid cooling in power modules” 5th Intern.Conf. Thermal Problems in Electronics – Microtherm 2003, June 30 – July 2, Łódź, Poland 237-243. 21. E.Dusiński, P.Śniecikowski, J.Szmidt, M.Elert, K.Zdunek, Properties of metal-oxides structures produced on silicon carbide substrates for high-temperature applications” 5th Intern.Conf. Thermal Problems in Electronics – Microtherm 2003, June 30 – July 2, Łódź, Poland. 22. K.Klimczak, M.Sochacki, J.Szmidt, A.Werbowy, A.Olszyna “Stability of properties of AlN layers produced by RPP method on SiC in temperatures reaching 500°C” 5th Intern.Conf. Thermal Problems in Electronics – Microtherm 2003, June 30 – July 2, Łódź, Poland. 23. A.Kolendo, M.Sochacki, A.Werbowy, J.Szmidt “Formation of ohmic Ni contacts to 4H-SiC by high temperature annealing” 5th Intern.Conf. Thermal Problems in Electronics – Microtherm 2003, June 30 – July 2, Łódź, Poland. 24. P. Firek, A.Werbowy,J.Szmidt, A.Olszyna “Influence of temperature on electronic properties of nanocrystalline c_BN films” 5th Intern.Conf. Thermal Problems in electronics – Microtherm 2003, June 30 – July 2, Łódź, Poland. 25. M. Słapa, J. Szmidt, M. Dudek, W.Czarnecki, M.Traczyk, A. Werbowy, et al. “Ultra-thin nanocrystalline diamond detectors” 14th European Conf. On Diamond Diamond-like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide – DIAMOND-2003 September 7-12, Salzburg (Austria). Abstract Book –5.5.5. 26. T. Guzdek, J. Szmidt, M. Dudek, P.Niedzielski “NDC film as an active gate layer in chemFET structures” 14th European Conf. On Diamond , Diamond-like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide – DIAMOND-2003, September 7-12, Salzburg (Austria), Abstract Book –5.5.4. 27. M. Śmietana, J. Szmidt, M. Dudek, P.Niedzielski “Optical properties of diamond-like clad for optical fibers” 14th European Conf. On Diamond , Diamond-like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide – DIAMOND-2003, September 7-12, Salzburg (Austria), Abstract Book –15.3.11. 28. J. Szmidt, E. Kowalska, H. Lange, A. Huczko, A.Werbowy, K. Kłos “Effect of substrate characteristics on the morphology of 1D nanocarbons produced by the catalytic CVD and non-thermal plasma methods” 14th European Conf. On Diamond , Diamond-like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide – DIAMOND-2003. September 7-12, Salzburg (Austria), Abstract Book –15.6.3. 29. T.Bieniek, R.B.Beck, A.Jakubowski, A.Kudła “Ultra shallow nitrogen plasma implantation for ultrathin silicon oxynitride (SiOxNy) layers formation” 6th Symposium “Diagnostics and Yield – Advanced Silicon Devices and Technologies for ULSI Era” June 22 – 25, Warsaw (Poland). 30. R.B.Beck, M.Giedz, A.Wojtkiewicz, A.Kudła, A.Jakubowski “Electrophysical properties of formed by PECVD ultrathin (<6.0 nm) silicon nitride layers” 6th Symposium “Diagnostics and Yield – Advanced Silicon Devices and Technologies for ULSI Era” June 22 – 25, Warsaw (Poland). 31. R.B.Beck, M.Cuch, A.Wojtkiewicz, A.Kudła*, A.Jakubowski “Thermal stability of formed by PECVD ultrathin (<6.0 nm) silicon oxynitride layers determined by optical and electrical measurements” 6th Symposium “Diagnostics and Yield – Advanced Silicon Devices and Technologies for ULSI Era” June 22 – 25, Warsaw (Poland). 32. M. Sochacki, A.Kolendo, J. Szmidt, A. Werbowy “Characterization of Pt/4H/-SiC Schottky diodes” 6th Symposium “Diagnostics and Yield – Advanced Silicon Devices and Technologies for ULSI Era” June 22 – 25, Warsaw (Poland). 33. W.Grabiński, D.Tomaszewski, L.Lemaitre, A.Jakubowski “Standarization of the compact model coding: non-fully depleted SOI MOSFET example” 6th Symposium “Diagnostics and Yield – Advanced Silicon Devices and Technologies for ULSI Era” June 22 – 25, Warsaw (Poland). 34. R.B. Beck, A.Jakubowski “Ultrathin oxynitride films for CMOS technology” 6th Symposium “Diagnostics and Yield – Advanced Silicon Devices and Technologies for ULSI Era” June 22 – 25, Warsaw (Poland). 35. L.Łukasiak, A.Jakubowski, Z.Pióro “Silicon microelectronics: where we have come from and where we are heading” 6th Symposium “Diagnostics and Yield – Advanced Silicon Devices and Technologies for ULSI Era” June 22 – 25, Warsaw (Poland). 36. J.Walczak, B.Majkusiak “Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers” 6th Symposium “Diagnostics and Yield – Advanced Silicon Devices and Technologies for ULSI Era” June 22 – 25, Warsaw (Poland). 37. A. Werbowy, A.Olszyna, A.Sokołowska, J.Szmidt, K. Zdunek, A.Barcz “Peculiarities of thin deposition by means of reactive impulse plasma assisted chemical vapour deposition (IPD) method” European Vacuum Congres Berlin 2003, 8th European Vacuum Conference and 2nd Annual Conference of the German Vacuum Society, Berlin, June 23 – 26, 2003. 38. A. Sokołowska, A.Werbowy, A. Barcz, M. Godlewski, J.Szmidt, A. Olszyna “Luminescent properties of wide bandgap materials at room temperature” European Materials Research Society, EMRS-2003, Fall Meeting, September 15-19, 2003 Warsaw (Poland). 39. P.Hoffmann, D.Schmeiβer, R.B.Beck, A.Jakubowski “Photoemissin studies of very thin (<10nm) silicon oxynitride (SiOxNy) layers formed by PECVD” European Materials Research Society, EMRS-2003, Fall Meeting, September 15-19, 2003 Warsaw. 40. M. Słapa, J. Szmidt, A.Szczęsny, P.Śniecikowski, W.Czarnecki, M.Dudek, M.Traczyk, A.Werbowy “Detectors with ulta-thin NDC layers” Summer School: Technology of carbon surface, October, 21-25 Łódź/Szklarska Poręba/Liberec. 41. M. Śmietana, J. Szmidt, M. Dudek, P.Niedzielski “Optical properties of diamond-like clad for optical fibres” Summer School: Technology of carbon surface, October, 21-25, Łódź/Szklarska Poręba/Liberec. 42. J. Szmidt, R. Gronau “Shallow plasma ion implantation of carbon into silicon substrate” Summer School: Technology of carbon surface, October, 21-25 Łódź/Szklarska Poręba/Liberec. 43. P. Śniecikowski, A. Szczęsny, J. Szmidt, A. Werbowy “Reactive ion etching of compound semiconductors – GAN and SiC” Summer School: Technology of carbon surface, October, 21-25 Łódź/Szklarska Poręba/Liberec. 44. T. Guzdek, J. Szmidt, M. Dudek, P.Niedzielski “Chemosensor with NCD dielectric layer as open gate in CHEMFET” Summer School: Technology of carbon surface, October, 21-25 Łódź/Szklarska Poręba/Liberec. 45. J. Szmidt, A. Werbowy, A. Jakubowski, L. Łukasiak „Materiały i technologie dla systemów mikroelektronicznych i optoelektronicznych” II Krajowa Konferencja Elektroniki –KKE’2003, Kołobrzeg, 9 – 12.06.2003, Mat.Konf., tom 1, s. 65-72. 46. M. Sochacki, M.T.H.Aung, J. Szmidt, Z. Lisik „SiC – stan obecny, perspektywy rozwoju” II Krajowa Konferencja Elektroniki –KKE’2003, Kołobrzeg , 9 – 12.06.2003. Mat.Konf., tom 1, s. 115-120. 47. M.Śmietana, J.Kalenik „Głowica światłowodowego czujnika zmian współczynnika załamania lub poziomu cieczy oparta na światłowodzie grubordzeniowym” II Krajowa Konferencja Elektroniki –KKE’2003, Kołobrzeg, 9 – 12.06.2003, Mat. Konf., tom 2, s.487-492. Contributions to books 48. M. Langer, Z.Lisik, E.Raj, N.K.Kim, J.Szmidt “Simulations for thermal analysis of MOSFET IPM using IMS substrate” in: P.M.A.Sloot et al.(eds.): ICCS 2003, Springer-Verlag, (2003) 636-643. 49. M.Langer, Z.Lisik, E.Raj, N.K.Kim, J.Szmidt “Dynamic simulations for thermal analysis of MOSFET IPM on IMS substrate” in: P.M.A.Sloot et al.(eds.): ICCS 2003, Springer-Verlag, (2003) 644-649.Back to top
Papers in Scientific Journals 1. D. Tomaszewski, K, Domański, L. Łukasiak, A. Zaręba, J. Gibki, A.Jakubowski "DC and AC models of partially-depleted SOI MOSFETS in weak inversion" Progress in SOI Structures and Devices Operating at Extreme Conditions, Kluwer Academic Publ. (Eds. F.Balestra, A. Nazarov, V.S. Lysenko), NATO Science Series, pp. 289 – 297. 2. M. Sochacki, J. Szmidt, A. Werbowy, M. Bakowski "Influence of annealing on reverse current of 4H – SiC Schottky diodes" Diamond and Related Materials 11 (2002) 1263 – 1267. 3. Jakubowski, L. Łukasiak, J. Szmidt "Mikroelektronika – materiały i przyrządy" Elektronika XLIII 7-8’2002, 5 – 8. 4. K. Kosiel, L. Dobrzański, B. Majkusiak, A. Jasik "MOVPE Deposition of AlAs/In0.53Ga0.47As/InP resonant tunneling heterostructure performing high PVR parameter" Journal of Wide Bandgap Materials vol.9, No. 1-2 (2001) 93 – 100. (2002 sage publications). 5. E. Dusiński, J. Szmidt, K. Zdunek, M. Elert, A. Barcz "Al2O3 layers for microelectronics applications" Journal of Wide Bandgap Materials vol.9, No. 1-2 (2001) 109 – 116. (2002 sage publications). 6. T. Bieniek, A. Wojtkiewicz, L. Łukasiak, R.B. Beck "Silicon dioxide as passivating, ultrathin layers in MOSFET gate stacks" Journal of Wide Bandgap Materials vol.8, No. 3-4 (2001) 201 – 209. (2002 sage publications). 7. J. Bodzenta, B. Burak, J. Mazur, J. Szmidt "Thermal properties of CN thin films measured by photothermal methods" Journal of Wide Bandgap Materials, vol.8, No. 3-4 (2001) 233 – 239. (2002 sage publications). 8. T.Guzdek, M.Cłapa, J.Szmidt "Dielectric properties of NCD films in sensor applications" Journal of Wide Bandgap Materials, vol.9, No. 3 (2002) 163 – 168. 9. A.Werbowy, P. Firek, J.Szmidt, M.Gałązka, A.Olszyna "Electric characterization and plasma etching of nanocrystalline c-BN layers" Journal of Wide Bandgap Materials, vol.9, No. 3 (2002) 169 – 176. 10. Szczęsny, J. Szmidt, R.B. Beck "Physical-chemical etching of GaN layers on sapphire" Journal of Wide Bandgap Materials,vol.9, No. 3 (2002) 185 – 190. 11. M. Gałązka, J.Szmidt, A.Werbowy "The influence of RF plasma processes on nitride (BN, AlN, GaN) layers" Journal of Wide Bandgap Materials, vol.9, No. 3 (2002) 207 – 212. 12. M. Sochacki, J.Szmidt, A.Werbowy, M.Bakowski "Current-voltage characteristics of 4H-SiC diodes with Ni contacts" Journal of Wide Bandgap Materials, vol.9, No. 4 (2002) 307 – 312. 13. M.T.Htun Aung, J.Szmidt, M.Bakowski "The study of thermal oxidation on SiC surface" Journal of Wide Bandgap Materials, vol.9, No. 4 (2002) 313 – 318. 14. P.Śniecikowski, J.Szmidt, M.T.Htun Aung, M.Bakowski, P. Niedzielski "Dry etching of bulk 4H-SiC and DLC/Sic structure" Journal of Wide Bandgap Materials, vol.9, No. 4 (2002) 319 – 324. 15. K.Klimczak, J.Szmidt, A.Olszyna, M.Bakowski, A.Barcz "Basic properties of AlN layers deposited onto SiC" Journal of Wide Bandgap Materials, vol.9, No. 4 (2002) 335 – 341. 16. C. Rapiejko, R.Mazurczyk,M.Gazicki, A.Werbowy "Parallel plate RF plasma deposition of Si/C films using tetraalkylsilanes as precursor compounds" Proceedings of Society of Vacuum Coaters, 2002, 372 - -377. 17. D.Tomaszewski, L.Łukasiak, K.Domański, A.Jakubowski, K.Kucharski, J.Gibki "Consistent DC and AC models of non-fully depleted SOI MOSFETs in strong inversion" Proceedings of the 9th International Conference MIXDES Design of Integrated Circuits and Systems, 2002, 111 – 114. Conference presentations 18. C.Rapiejko, R.Mazurczyk,M.Gazicki, A.Werbowy "Parallel plate RF plasma deposition of Si/C films using tetraalkylsilanes as precursor compounds" 45th Annual Technical Conference Lake Buena Vista, Florida (USA), April 13 – 18, 2002, Proc., pp. 372 – 377. 19. S.Szostak, L. Łukasiak, A. Jakubowski "System for extensive characterization of MOS and SOI MOS structures by means of charge pumping" (invited), 4th IEEE International Caracas Conference on Devices, Circuits and Systems Aruba, April 17 – 19, 2002, Pp. 1033-1 – 1033-6. 20. D.Tomaszewski, L.Łukasiak, K.Domański, A.Jakubowski "Small-signal model of partially-depleted SOI MOSFETS and its parameter extraction" 4th IEEE International Caracas Conference on Devices, Circuits and Systems, Aruba, April 17 – 19, 2002, D023-1 – D023-4 21. A.Szczęsny, P.Śniecikowski, J.Szmidt "Reactive ion etching of novel materials – GaN and SiC" IV International Symposium "Ion implantation and other application of ions and electrons" ION 2002, Kazimierz Dolny, 10-13.06.2002. 22. R.B. Beck, M.Giedz, A.Wojtkiewicz, A.Kudła, A.Jakubowski "PECVD formation of ultrathin silicon nitride layers for CMOS technology" IV International Symposium "Ion implantation and other application of ions and electrons" ION 2002, Kazimierz Dolny, 10-13.06.2002. 23. E.Dusiński, J.Szmidt, K.Zdunek, M.Elert “IPD method parameters effect on structural and electrical properties of titanium oxide films" IV International Symposium "Ion implantation and other application of ions and electrons" ION 2002, Kazimierz Dolny, 10-13.06.2002. 24. K.Klimczak, M.Sochacki, J.Szmidt, A.Werbowy, A.Olszyna "AlN fims produced by reactive pulse plasma method as dielectric for Si and SiC substrates" IV International Symposium "Ion implantation and other application of ions and electrons" ION 2002, Kazimierz Dolny, 10-13.06.2002. 25. A.Werbowy, A.Olszyna, A.Sokołowska, J.Szmidt, K.Klimczak "The chemistry of a boundary region between silicon substrate and nanocrystalline dielectric films grown by reactive impulse plasma CVD method" IV International Symposium "Ion implantation and other application of ions and electrons" ION 2002, Kazimierz Dolny, 10-13.06.2002. 26. D.Tomaszewski, L.Łukasiak, K.Domański, A.Jakubowski, K.Kucharski, J.Gibki "Consistent DC and AC models of non-fully depleted SOI MOSFETs in strong inversion" 9th International Conference MIXDES Design of Integrated Circuits and Systems, Wrocław, 20-22.06.2002. 27. A.Jakubowski, L.Łukasiak, J. Szmidt "Semiconductor devices – silicon and other materials" XXVI International Conference of International Microelectronics and Packaging Society, Poland Chapter IMAPS, Warszawa, 25 – 7.09.2002. Proc. pp.1 – 5 (2002). 28. A.Zaręba, L.Łukasiak, A.Jakubowski "Modeling of SiGe-base heterojunction bipolar transistors" XXVI International Conference of International Microelectronics and Packaging Society, Poland Chapter IMAPS Warszawa, 25 – 7.09.2002. Proc. pp.91 - 94 (2002). 29. A.Jakubowski, L.Łukasiak, J.Szmidt "Mikroelektronika – materiały i przyrządy" Krajowa Konferencja Elektroniki, Kołobrzeg – Dźwirzyno, czerwiec 2002, s.15 – 21, (referat zaproszony). 30. Zbigniew Pióro "Wielka konwergencja – początek cyfrowego świata" Krajowa Konferencja Elektroniki, Kołobrzeg – Dźwirzyno, czerwiec 2002, s. 5 – 63, (referat zaproszony). 31. T.Guzdek, J.Szmidt, P.Niedzielski "Dyskretne elementy mikroelektroniczne z warstwą węglową chemoczułą" Krajowa Konferencja Elektroniki, Kołobrzeg– Dźwirzyno, czerwiec 2002, s. 97 –101. 32. S.Szostak, L.Łukasiak, A.Jakubowski "System do charakteryzacji struktur MOS i MOS SOI metodą pompowania ładunku" Krajowa Konferencja Elektroniki, Kołobrzeg – Dźwirzyno, czerwiec 2002, s. 109 – 114. 33. P.Brzozowski, J.Piotrowski, A.Jakubowski "Komputerowa symulacja i optymalizacja niechłodzonych fotodetektorów długofalowego promieniowania podczerwonego" Krajowa Konferencja Elektroniki, Kołobrzeg – Dźwirzyno, czerwiec 2002, s. 185 – 190. 34. M.Kostana, S.M.Pietruszko, A.Jakubowski "Tranzystory cienkowarstwowe z krzemu amorficznego" Krajowa Konferencja Elektroniki, Kołobrzeg – Dźwirzyno, czerwiec 2002, s. 723 – 727. 35. A.Zaręba, A.Jakubowski "Modelowanie napięcia Early’ego w tranzystorach HBT z bazą SiGe" Krajowa Konferencja Elektroniki, Kołobrzeg – Dźwirzyno, czerwiec 2002, 729 – 734. 36. A.Kolendo, M.Sochacki, J.Szmidt, A.Werbowy "Parametry diod Schottky’ego Pt/4H – SiC" Krajowa Konferencja Elektroniki, Kołobrzeg – Dźwirzyno, czerwiec 2002, s. 759 – 764. 37. A.Linkowski, L.Łukasiak, A.Jakubowski "Analiza wpływu parametrów tranzystora HBT z bazą SiGe na współczynnik wzmocnienia prądowego" Krajowa Konferencja Elektroniki, Kołobrzeg – Dźwirzyno, czerwiec 2002, s. 805 –810. 38. M. Leśko, J.Szmidt "Zastosowanie nanorurek węglowych wytworzonych metodą plazmową" VII Sympozjum "Chemia Plazmy", Kazimierz Dolny, 16 – 18 wrzesień, 2002. 39. R.B.Beck, T.Bieniek, A.Wojtkiewicz, A.Jakubowski "Niskotemperaturowe utlenianie plazmowe krzemu – możliwości zastosowania w technologii CMOS-ULSI" VII Sympozjum "Chemia Plazmy", Kazimierz Dolny, 16 – 18 wrzesień, 2002. 40. R.B.Beck, M.Cuch, A.Wojtkiewicz, A.Kudła, A.Jakubowski "Wytwarzanie bardzo cienkich warstw tlenko-azotków krzemu (SiOXNY) metodą PECVD (technologia i charakteryzacja) VII Sympozjum "Chemia Plazmy" Kazimierz Dolny, 16 – 18 wrzesień, 2002. 41. M.Gałązka, J.Szmidt, A.Werbowy, P.Śniecikowski, J.Żelazko "Plazmowe nakładanie i trawienie warstw węglowych dla zastosowań mikroelektro-nicznych" VII Sympozjum "Chemia Plazmy", Kazimierz Dolny, 16 – 18 wrzesień, 2002. 42. J.Szmidt, A.Werbowy "Plazma w mikroelektronice" VII Sympozjum "Chemia Plazmy", Kazimierz Dolny, 16 – 18 wrzesień, 2002, (referat zaproszony). 43. J. Szmidt "Diament w mikroelektronice i optoelektronice" Posiedzenie Sekcji Mikroelektroniki KEiT PAN, Warszawa, kwiecień 2002. (referat zaproszony).Back to top
1. A.R. Olszyna, A. Sokołowska, J. Szmidt, A. Werbowy, M. Bąkowski, "Dielectric properties of nanocrystalline AlN with respect to its crystal chemistry", International Journal of Inorganic Materials, 3 (2001) 1311-1313. 2. J. Walczak, B. Majkusiak, "The remote roughness mobility resulting from the ultra thin SiO2 thickness non-uniformity in the DG SOI and bulk MOS transistors", Microelectronic Engineering, 59 (2001) 417-421. 3. O. Mrooz, A. Kovalski, J. Pogorzelska, O.Shpotyuk, M. Vakiv, B. Butkiewicz, J. Maciak, "Thermoelectrical degradation processes in NTC thermistors for in-rush current protection of electronic circuits", Microelectronic Engineering, 41 (2001) 773-777. 4. B. Majkusiak, "Quantum mechanical effects in SOI devices", Solid State Electronics, 45 (2001) 607-611. 5. L. Łukasiak, P. Roman, A. Jakubowski, J. Rużyłło, "Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates", Solid State Electronics, 45 (2001) 95-100. 6. A.Zaręba, L. Łukasiak, A. Jakubowski, "Modeling of SiGe-base heterojunction bipolar transistor with gaussian doping distribution", Solid State Electronics, 45 (2001) 2029-2032. 7. R.B. Beck, A. Jakubowski, L. Łukasiak, M. Korwin-Pawłowski, "Challenges in ultrathin oxide layers formation", Journal of Telecommunications and Information Technology, pp. 27-34. 8. T. Dębski, W. Barth, I.Rangelow, K. Domański, D. Tomaszewski, P. Grabiec, A. Jakubowski, "Piezoresistive sensors for atomic force microscopy - numerical simulations by means of virtual wafer fab", Journal of Telecommunications and Information Technology, pp. 35-39. 9. W. Barth, T. Dębski, I.Rangelow, P. Grabiec, K. Studzińska, M.Zaborowski, S.Mitura, S.Biehl, P.Hudek, I.Kostic, A.Jakubowski, "Fabrication and properties of the field emission array with self-alignment gate electrode", Journal of Telecommunications and Information Technology, pp. 49-56. 10. K. Domański, P.Grabiec, T.Gotszalk, R.B. Beck, T. Dębski, I. Rangelov, "Adsorption properties of porous silicon", Journal of Telecommunications and Information Technology, pp. 53-56. 11. D. Tomaszewski, L.Łukasiak, J. Gibki, A. Jakubowski, "An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs", Journal of Telecommunications and Information Technology, pp. 57-60. 12. D. Tomaszewski, L.Łukasiak,A. Jakubowski, K. Domański, "A model of partially-depleted SOI MOSFETs in the subthreshold range", Journal of Telecommunications and Information Technology, pp. 61-64. 13. T. Janik, A. Jakubowski, B. Majkusiak, M. Korwin-Pawłowski, "Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectrics", Journal of Telecommunications and Information Technology, pp. 65-69. 14. J.Szmidt, A. Werbowy, E. Dusiński, K. Zdunek, "Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film", Journal of Telecommunications and Information Technology, pp.70-75. 15. B. Majkusiak, "Theoretical prediction of switching in MOS/SOI transistor with ultrathin oxide", Proceedings of Electrchemical Society vol. 2001 -3, pp. 227-232. 16. E. Josse, T. Skotnicki, M. Jurczak, M. Paoli, B. Tormen, D. Dutartre, P. Ribot, A. Villaret, E. Sondergard, "High performance 40 nm vertical MOSFET within a conventional CMOS process flow", Symposium on VLSI Technology Digest of Technical Papers, Kyoto, 12-14 June 2001, pp. 55-56. 17. L. Łukasiak, A. Jakubowski, R.B. Beck, A. Wojtkiewicz, M. Korwin-Pawłowski, J. Rużyłło, "Dielektryki bramkowe dla nowych generacji układów scalonych", Elektronika (XLII) 2'2001 pp. 27-29. 18. J. Szmidt, M. Bakowski A. Jakubowski, A. Sokołowska, "Warstwy dielektryczne do przyrządów wytwarzanych z węglika krzemu", Elektronika, (XLII) 2'2001pp. 30 - 33. 19. B. Majkusiak, "Modeling of gate tunnel currents in MOS and MOS/SOI transistors", Proc. 8th International Conference Mixed Design of Integrated Circuits and Systems MIXDES 2001, pp. 69-74. 20. J. Walczak, B. Majkusiak, "The remote roughness mobility resulting from the ultra thin SiO2 thickness non-uniformity in the DG SOI and bulk MOS transistors", Proc. of INFOS'2001, pp. 141-142. 21. K. Domański, D.Tomaszewski, P.Grabiec, Z. Gniazdowski, A.Kudła, R.B. Beck, A.Jakubowski, T.Gosztalk, I.W.Rangelow, "Silicon piezoresistive cantilever beam with porous silicon element", Proceedings 11th Int. Workshop on the Physics of Semmiconductor Devices, vol. - 1, 11-15 Dec.2001, pp. 523-526. 22. D. Tomaszewski, L Łukasiak, J. Gibki, K. Domański, A.Jakubowski, A.Zaręba, "Measurement and modelling of SOI MOSFETs capacitances", Proceedings 11th Int. Workshop on the Physics of Semmiconductor Devices, vol. - 1, 11-15 Dec.2001, pp. 725-728. 23. A. Jakubowski, "Zawód: elektronik; generacja krzemu", Perspektywy 25 (36), maj 2001, str. 15 - 17.Back to top
1. A.Werbowy, J. Szmidt, A. Sokołowska, S.Mitura, "R F plasma selective etching of boron nitride films", Diamond and Related Materials, 9 (2000) 609-613. 2. M. Jurczak, T. Skotnicki, "Silicon-on-nothing (SON) an innovative process for advanced CMOS", IEEE Transaction on Electron Devices, vol. 47, No 11 (2000) 2179-2187. 3. B. Majkusiak, M.H. Badri, "Semiconductor thickness and back-gate voltage effects on the gate tunnel current in the MOS/SOI system with an ultrathin oxide", IEEE Transaction on Electron Devices, vol. 47, No 12 (2000) 2347-2351. 4. A.Zaręba, A. Jakubowski, "Optimization of selected parameters of SiGe HBT transistors", Journal of Telecommunications and Information Technology, vol. 3,4 (2000) 15 - 18. 5. D. Tomaszewski, L. Łukasiak, A. Zaręba, A. Jakubowski, "An impact of frequency on capacitances of partially-depleted SOI MOSFETs", Journal of Telecommunications and Information Technology, vol. 3,4 (2000) 67-71. 6. J. Gibki, J. Kątcki, J. Ratajczak, L. Łukasiak, A. Jakubowski, D. Tomaszewski, "Characterization of SOI fabrication process using gated-diode measurements and TEM studies", Journal of Telecommunications and Information Technology, vol. 3,4 (2000) 81-83. 7. T. Janik, B. Majkusiak, A. Jakubowski, "Prediction of I-V characteristics of double-gate SOI MOSFETS with ultrathin semiconductor layer", Electron Technology, vol. 33, No 4 (2000) 567-570. 8. L. Łukasiak, A. Jakubowski, S. Szostak, "A new model of three-level charge pumping", Electron Technology, vol. 33, No 4 (2000) 558-566. 9. E.Josse, T. Skotnicki, M. Jurczak, F. Martin, et.al., "High performance 0.1 mm pMOSFETs with optimized poly-Si and poly-SiGe gates", 30th European Solid State Device Research Conference ESSDERC'2000 Cork (Irland), Sept.,11-13, 2000, 548-551. 10. S. Monfray, J.L. Autran, M. Jurczak, T. Skotnicki, "Self-consistent optimization and performance analysis of double-gate MOS transistor", 30th European Solid State Device Research Conference ESSDERC'2000 Cork (Irland), Sept.,11-13, 2000 336-339. 11. M. Jurczak, T. Skotnicki, S. Monfray, et.al., "Dielectric pockets - a new concept of the junctions for deca-nanometric CMOS devices", 30th European Solid State Device Research Conference ESSDERC'2000, Cork (Irland), Sept.,11-13, 2000, 536-539.Back to top
1. J. Szmidt, A. Sokołowska, A. Olszyna, A. Werbowy, P. Pawłowski, "Electronic properties of nanocrystalline BN and AlN films deposited on Si and GaAs - a comparison", Diamond and Related Materials, 8 (1999) 391-397. 2. T.Brożek, E.C. Szyper, C.R. Viswanatan, "Erratum to polarity dependence of cumulative properties of charge-to-breakdown in very thin gate oxides", Solid State Electronics, 43 (1999) 693-696. 3. J. Szmidt, "Electronic properties of nanocrystalline layers of wide-band-gap materials", Chaos, Solitons & Fractals J., vol. 10, No12, pp. 2099-2152. 4. M. Badri, B. Majkusiak, "Theory of the MOS/SOI tunnel Diode", Microelectronic Engineering, 48, pp.375-378. 5. D. Tomaszewski, A. Jakubowski, J. Gibki, T. Dębski, M. Korwin-Pawłowski, "Influence of silicon film parameters on C-V characteristics of partially depleted SOI MOSFETs", NATO Science Series, Perspectives, Science and Technologies for Novel Silicon on Insulator Devices (eds. P.L. Hemment et.al.) 295-305. 6. Werbowy, J. Szmidt, A. Sokołowska, S. Mitura, "RF plasma selective etching of boron nitride films", Diamond and Related Materials. 7. K. Domański, E. Półrolnik, R.B. Beck, A. Brzozowski, "Characterization of oxidized porous silicon layer in FIPOS structure", Electron Technology, 32, 1/2, pp 170-174. 8. K. Domański, E. Półrolnik, R.B. Beck, E. Nossarzewska-Orłowska, "Optimization of Porous silicon fabrication in application to FIPOS technology", Electron Technology, 32, 1/2, pp 166-169. 9. M. Jurczak, A. Jakubowski, "Modelling of SOI MOS transistors", Electron Technology, 32, 1/2, pp 21-28. 10. B. Majkusiak, T. Janik, "Physically based modelling of the double-gate SOI transistor with thin semiconductor film", Electron Technology, 32, 1/2, pp 29-38. 11. R.B. Beck, F. Ikraiam, J. Gibki, L. Łukasiak, A. Zaręba, A. Jakubowski, "Electrical characterization methods of SOI structures", Electron Technology, 32, 1/2, pp 63-71. 12. D. Tomaszewski, A. Jakubowski, T. Dębski, "An effect of PD SOI MOSFET parameters variations on ITS electrical characteristics", Electron Technology, 32, 1/2, pp 91-95. 13. D. Tomaszewski, A. Jakubowski, J. Gibki, "A model of I-V characteristics of partially-depleted SOI MOSFETs", Electron Technology, 32, 1/2, pp 96-103. 14. D. Tomaszewski, A. Jakubowski, J. Gibki, "A small-signal non-quasi-static model of PD SOI MOSFETs", Electron Technology, 32, 1/2, pp 104-109. 15. J. Gibki, A. Jakubowski, L. Łukasiak, D. Tomaszewski, M. Korwin-Pawłowski, "Determination of doping concentration and effective carrier lifetime in SOI structures from electrical measurements of gate controlled diode", Electron Technology, 32, 1/2, pp 116-118. 16. J. Walczak, B. Majkusiak, T. Janik, "Modelling of the effective mobility versus effective electric field in the GAA SOI transistor", Electron Technology, 32, 1/2, pp 119-122. 17. F.Ikraiam, R.B. Beck, A. Jakubowski, "Quantitative analysis of C-V characterization of thin-body MOS capacitors on SOI substrates", Electron Technology, 32, 1/2, pp 123-127. 18. Zaręba, L.Łukasiak, R.B. Beck, A. Jakubowski, "Modelling C-V-t characteristics of MOS SOI capacitors", Electron Technology, 32, 1/2, pp 128-129. 19. M. Badri, F. Ikraiam, B. Majkusiak, R.B. Beck, "A quantum factor correction for modeling the C-V characteristics of the MOS-Soi structure", Electron Technology, 32, 1/2, pp 130-132. 20. L. Łukasiak, "Modelling charge pumping in SOI", Electron Technology, , 32, 1/2, pp 133-136. 21. T. Łozowski, E. Montrimas, R. Rinkunas, R.B. Beck, A. Jakubowski, "Investigation of belectrical immunity in monocrystalline and porous silicon oxide layers", Electron Technology, 32, 1/2, pp 154-157. 22. T. Łozowski, S. Sakalauskas, R. Puras, A. Jakubowski R.B. Beck, "Measurement of surface potential distribution in porous silicon", Electron Technology, 32, 1/2, pp 158-161. 23. E. Półrolnik, K. Domański, R.B. Beck, E. Nossarzewska-Orłowska, "Optimization of porous silicon fabrication in application to FIPOS Technology", Electron Technology, 32, 1/2, pp 166-169. 24. L. Łukasiak, B. Nowak, S. Szostak, A. Jakubowski, "The influence of structure and signal parameters on the results of two-level charge pumping measurements", Electron Technology, 32, pp. 295-304. 25. Werbowy, P. Pawłowski, J. Siwiec, J. Szmidt, A. Olszyna, A. Sokołowska, "AlN layers plasmochemically produced as semiconductors", Nukleonika, vol. 44, No. 2, pp. 253-260. 26. A. Werbowy, J. Szmidt, A. Sokołowska, 9th CIMTEC-World Ceramic Congress. Ceramics: Getting into the 2000's - Part E, P. Vincenzini (Ed.), Techna Srl., "Electric breakdown phenomena in thin nanocrystalline nitride films", (1999) 85-92. 27. D. Tomaszewski, A. Jakubowski, J. Gibki, T. Dębski, M. Korwin-Pawłowski, "Influence of silicon film parameters on C-V characteristics of partially depleted SOI MOSFETs", NATO Science Series, Perspectives, Science and Technologies for Novel Silicon on Insulator Devices (eds. P.L. Hemment et.al.), 295-305.Back to top
1. A. Ikraiam, R.B. Beck, A. Jakubowski,
"Modeling of SOI-MOS capacitors C-V behavior: partially - and full-depleted cases",
IEEE Transactions on Electron Devices, vol. 45, No 5, May 1998, pp. 1026-1032.
2. B. Majkusiak, T. Janik, J. Walczak,
"Semiconductor thickness effects in the double-gate SOI MOSFET",
IEEE Transactions on Electron Devices, vol. 45, No 5, May 1998, pp. 1127-1134.
3. T. Janik B. Majkusiak,
"Anaysis of the MOS transistor based on the self-consistent solution to the schrodinger and poisson equations
and on the local mobility model",
IEEE Transactions on Electron Devices, vol. 45, No 6, June 1998, pp.1263-1271.
4. B. Majkusiak,
"Experimental and theoretical study of the current-voltage characteristics of the MISIM tunnel transistor",
IEEE Transactions on Electron Devices, vol. 45, No 9, June 1998, pp.1903-1911.
5. M. Jurczak, A. Jakubowski, L. Łukasiak,
"The effects of high doping on the I-V characteristics of a thin-films SOI MOSFET",
IEEE Transactions on Electron Devices, vol. 45, No 9, June 1998, pp.1985-1992.
6. A. Werbowy, J. Szmidt, A. Sokołowska, A. Olszyna,
"Heterojunction of amorphous wide band gap nitrides and silicon",
Diamond and Related Matrials, 7 (1998) 397- 401.
7. A. Werbowy, J. Szmidt, A. Olszyna, A. Sokołowska, P. Pawłowski,
"Electronic properties of nanocrystalline BN and AlN films deposited on Si and GaAs - comparison",
Diamond and Related Matrials, (1998)
8. J. Szmidt, A. Werbowy, A. Jakubowski, A. Sokołowska, A. Olszyna,
"Nanocrystalline wide band gap nitrides for electronics",
Physics of Semiconductor Devices, V.Kumar & S.K. Aragwal (Eds), Narosa Publishing House, New Delhi (India), (1998) 102-105.
9. K. Domański, E. Półrolnik, R.B. Beck, A. Jakubowski, J.K. Żak,
"Some Isseus on controling the morphology of the pores formed in monocrystaline silicon by electrochemical process",
Physics of Semiconductor Devices, V.Kumar & S.K. Aragwal (Eds), Narosa Publishing House, New Delhi (India), (1998) 628-631.
10. A. Jakubowski, M. Jurczak, L. Łukasiak,
"Modelling and characterization of SOI devices",
Physics of Semiconductor Devices, V.Kumar & S.K. Aragwal (Eds), Narosa Publishing House, New Delhi (India), (1998) 1010-1013.
11. A. Zaręba, F. Ikraiam, R.B. Beck, A. Jakubowski,
"Non-equilibrium related effects in MOS-SOI structures capacitance-voltage measurements analysis",
Physics of Semiconductor Devices, V.Kumar & S.K. Aragwal (Eds), Narosa Publishing House, New Delhi (India), (1998) 1080-1083.
12. J. Gibki, A. Jakubowski, M. Jurczak, D. Tomaszewski,
"A comparison of C-V and I-V characteristics of partially and fully depleted gate-controlled diodes",
Physics of Semiconductor Devices, V.Kumar & S.K. Aragwal (Eds), Narosa Publishing House, New Delhi (India), (1998) 1006-1009.
13. D. Tomaszewski, J. Gibki, A. Jakubowski, M. Jurczak,
"A small-signal non-quasistatic model of partially depleted SOI MOSFET's",
Physics of Semiconductor Devices, V.Kumar & S.K. Aragwal (Eds), Narosa Publishing House, New Delhi (India), (1998) 1076-1079.
14. T. Brożek, Y.D. Chan, C.R. Viswanathan,
"Gate oxide leacage due to temperature accelerated degradation under plasma charging conditions",
Microelectronics and Reliability, vol. 38, No 1, (1998) 73 - 79.
15. T. Brożek, V.R. Rao, A. Sridharan, J. Werking, Y.D. Chan, C.R. Viswanathan,
"Charge injection using gate-induced drein-leakage current for characterization of plasma edge damage in CMOS devices", IEEE Transactions on Semiconductor Manufacturing, vol. 11, No.2 (1998) 211 - 216.
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1. L. Lukasiak, A. Jakubowski, M. Jurczak, R.B. Beck, A. Zareba, "SOI and silicon germanium: new materials for silicon microelectronics", 1st Polish-Korean Symposium on Materials, Warsaw, 16-20 Dec.1996. Proceedings, pp. 135-137 (1997). 2. F. Ikraiam, R.B. Beck, A. Jakubowski, "The capacitance-voltage behaviour of SOI-MOS thick-body capacitors", Proc. 8-th Int. Conf. on Microelectronics ICM'96, Kair, p.419-422, grudzien 1996. 3.. J. Gibki, A. Jakubowski, M. Jurczak, "Determination of thickness of gate oxide and active layer in SOI structures from CV measurements", 10th Biennal Conference on Insulating Films on Semiconductors INFOS'97, Stenungsund, Sweden, June1997, in Microelectronic Engineering, vol. 36, n. 1-4, June 1997, pp. 371-373. 4. B. Majkusiak, T. Janik, "Electron energy quantization effects in the very thin film GAA SOI transistor", 10th Biennal Conference on Insulating Films on Semiconductors INFOS'97, Stenungsund, Sweden, June1997, in Microelectronic Engineering, vol. 36, n. 1-4, June 1997, pp. 379-382. 5. B. Majkusiak, J. Walczak, T. Janik, "Consideration of the Semiconductor Thickness Effect on the Electron Effective Mobility in the GAA SOI Transistor", 192nd Meeting of the Electrochem. Soc., Paris, Sept. 1997, in S. Cristoloveanu (ed.) "Silicon-On-Insulator Technology & Devices", Electrochem. Soc. Proc. vol. 97-23, 1997, pp. 301-306. 6. A. Zareba, R.B. Beck, F. Ikraiam and A. Jakubowski, "Characterization of MOS-SOI structures by means of capacitance-voltage measurement analysis", Proceedings of ECS’97 Joint Meeting, pp. 2338-2339, Paris 1997. 7. A. Zareba, F. Ikraiam, R.B. Beck and A. Jakubowski, "Non-equilibrium related effects in MOS-SOI structures capacitance-voltage measurements analysis", Proc. of Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 1997, pp. 1080-1082. 8. M.Jurczak, A.Jakubowski, "Analytical I-V description of thin-film SOI MOSFET with position-dependent mobility model", Proc. of 8th Int. Symp. on "Silicon on insulator - Technology and Devices", 192nd Meeting, the Electrochemical Society, Inc., Paris (1997) 259. 9. M.Jurczak, A.Jakubowski, "An analytical continuous model of fully depleted SOI MOSFET applicable for CAD", Proc. of MIEL'97 conference, Nis 14-17 Sept. 1997, Serbia, Proc. IEEE Press, vol.1 pp.351-354. 10. A. Jakubowski, M.Jurczak, L.Lukasiak, "Modeling and characterization of SOI devices", (invited papers), Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 1997, V. Kumar, S.K. Agarwal (eds.), "Physics of Semiconductor Devices", vol. 2, Narosa Publishing House, pp.1100-1013. 11. J.Gibki, A.Jakubowski, M.Jurczak, D.Tomaszewski, "A comparison of C-V and I-V characteristics of partially depleted gate-controlled diodes", Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 1997, V. Kumar, S.K. Agarwal (eds.), "Physics of Semiconductor Devices", vol. 2, Narosa Publishing House, 1006-1009. 12. D.Tomaszewski, J.Gibki, A.Jakubowski, M.Jurczak, "A Small signal non-quasistatic model of partially depleted SOI-MOSFETs", Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 1997, V. Kumar, S.K. Agarwal (eds.), "Physics of Semiconductor Devices", vol. 2, Narosa Publishing House, pp. 1076-1079. 13. K. Domanski, E. Polrolnik, R.B. Beck, A. Jakubowski, J.K. Zak, "Some issues on controling the morphology of the pores formed in monocrystaline silicon by electrochemical process", Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec.1997, V. Kumar, S.K. Agarwal (eds.), "Physics of Semiconductor Devices", vol. 2, Narosa Publishing House, pp. 628-631. 14. A. Zareba, F. Ikraiam, R.B. Beck, A. Jakubowski, "Non-equilibrium related effects in MOS-SOI structures capacitance-voltage measurements analysis", Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 1997, V. Kumar, S.K. Agarwal (eds.), "Physics of Semiconductor Devices", vol. 2, Narosa Publishing House, pp. 1080-1082. 15. P.Niedzielski, E.Mitura, M.Dluzniewski, P.Przymusiala, S.Der Sahaguian, E.Staryga, J.Zak, A.Sokolowska, J.Szmidt, A.Stanishevski, J.J.Moll, J.A.Moll, "Comparison of the surface structure of carbon films deposited by different methods", Diamond and Related Materials, 6 (1997) 721. 16. A. Sokolowska, J. Szmidt, J. Konwerska-Hrabowska, A. Werbowy, A. Olszyna, K. Zdunek, S. Mitura, "Allotropic forms of carbon nitride", Diamond Based Composities and Related Materials, M.A. Prelas et al (Eds), NATO ASI Series, Kluwer Academic Publishers, (1997) 151. 17. M. Langer, S. Mitura, J. Szmidt, A. Sokolowska, "Verification of nanocrystalline diamond films quality", Diamond Based Composities and Related Materials, M.A. Prelas et al (Eds), NATO ASI Series, Kluwer Academic Publishers, (1997) 211. 18. S. Mitura, E. Mitura, P. Niedzielski, M. Dluzniewski, E. Staryga, D. Der-Sahaguian, J. Zak, A. Sokolowska, J. Szmidt, A. Stanishevsky, "The surface structure of carbon films deposited by different plasma chemical metods", Diamond Based Composities and Related Materials, M.A. Prelas et al (Eds), NATO ASI Series, Kluwer Academic Publishers, (1997) 219. 19. Z. Lisik, S. Mitura, J. Szmidt, W. Cieplak, "Termiczna optymalizacja konstrukcji przyrządów półprzewodnikowych mocy z bramką palczastą", Elektronika, Prace Naukowe, Politechnika Łódzka, zeszyt Nr 2, (1997) 65. 20. S. Mitura, A. Sokolowska, J. Szmidt, "NCD - Nanocrystalline diamond coatings", Poland from Science Industry - Techno Messe Kansai, 12th Technomart Osaka (Japan), 24-26 February 1997. 21. J. Szmidt, A. Werbowy, A. Sokolowska, A. Olszyna, S. Mitura, "Nanocrystalline Wide Band Gap Nitrides for Electronics", Presentation of Innovative Technologies and Products Developed in Polish Scientific Research Centers - INPEX'XIII Invention/New Product Exposition, Pittsburgh (USA), 15-18 May, (1997) and Sympsium: Science-Education-Technology Poland: from Science Industry, Carnegie Mellon University, Pittsburgh (USA), 15-16 May, 1997. 22. S. Mitura, A. Sokolowska, J. Szmidt, "Nanocrystalline diamond coatings", Presentation of Innovative Technologies and Products Developed in Polish Scientific Research Centers - INPEX'XIII Invention/New Product Exposition, Pittsburgh (USA), 15-18 May, (1997) and Sympsium: Science-Education-Technology Poland: from Science Industry, Carnegie Mellon University, Pittsburgh (USA), 15-16 May, 1997. 23. A. Jakubowski, B. Majkusiak, M. Jurczak, J. Gibki, T. Janik, L. Lukasiak, R.B. Beck, „Modeling and characterization of SOI-MOS Devices", Presentation of Innovative Technologies and Products Developed in Polish Scientific Research Centers - INPEX'XIII Invention/New Product Exposition, Pittsburgh (USA), 15-18 May, (1997) and Sympsium: Science-Education-Technology Poland: from Science Industry, Carnegie Mellon University, Pittsburgh (USA), 15-16 May, 1997. 24. A. Jakubowski, B. Majkusiak, M. Jurczak, J. Gibki, T. Janik, L. Lukasiak, R.B. Beck, „Modeling and characterization of SOI-MOS Devices", Poland from Science Industry - Techno Messe Kansai, 12th Technomart Osaka (Japan), 24-26 February 1997.Back to top
1. A. Jakubowski, M. Jurczak, L. Lukasiak, "Technologia SOI - marzenie czy rzeczywistosc ?", Elektronika, t. 37, Nr 2, str. 20-22, 1996 2. A. Jakubowski, M. Jurczak, R.B. Beck, L. Lukasiak, "Technologia SOI - materialy", Elektronika, t. 37, Nr 3, str. 22-25, 1996 3. M. Jurczak, A. Jakubowski, L. Lukasiak, "Technologia SOI - przyrzady", Elektronika, t. 37, Nr 4, str. 15-20, 1996 4. E. Mitura, A. Mitura, S. Mitura, P. Niedzielski, J. Bodzenta, J. Mazur, A. Sokolowska, J. Szmidt, A. Olszyna, "Photothermal measurements of thermal conductivity of thin amorphous CxNy films", 3rd International Symposium on Diamond Films ISDF3, St. Petersburg (Russia), 16-19 June 1996. 5. A. Sokolowska, J. Szmidt, S. Mitura, J. Konwerska-Hrabowska, "Allotropic forms of carbon nitride", NATO Advanced Research Workshop on Diamond Based Composites, St. Petersburg (Russia), 19-21 June 1996. 6. S. Mitura, E. Mitura, P. Niedzielski, S. Der Sahaguian, A. Sokolowska, J. Szmidt, A. Stanishevsky, J. Zak, "The surface structure of carbon films deposited by different plasmachemical methods", NATO Advanced Research Workshop on Diamond Based Composites, St. Petersburg (Russia), 19-21 June 1996. 7. M. Langer, S. Mitura, J. Szmidt, A. Sokolowska, "Verification of nanocrystalline diamond films quality", NATO Advanced Research Workshop on Diamond Based Composites, St. Petersburg (Russia), 19-21 June 1996. 8. E. Mitura, A. Mitura, S. Mitura, P. Niedzielski, J. Bodzenta, J. Mazur, A. Sokolowska, J. Szmidt, A. Olszyna, "Photothermal measurements of thermal conductivity of thin amorphous CxNy films", NATO Advanced Research Workshop on Diamond Based Composites, St. Petersburg (Russia), 19-21 June 1996. 9. M. Dluzniewski, E. Mitura, S. Mitura, P. Niedzielski, P. Przymusiala, S. Der-Sahaguian, E. Staryga, J. Zak, A. Sokolowska, J. Szmidt, A. Stanishevsky, J.A. Moll, J.J. Moll, "Comparison of the surface structure of carbon films deposited by different methods", 7th European Conference on Diamond, Diamond-like and Related Materials DIAMOND'96 jointly with 5th International Conference on the New Diamond Science and Technology ICNDST-5. Tours (France), 8-13 September 1996. 10. Z. Lisik, S. Mitura, J. Szmidt, 3-D simulation of gate current distribution in GTO thyristors", ISPS'96, Prague, 11-13 September 1996. 11. A. Sokolowska, A. Olszyna, A. Werbowy, J. Szmidt, "Junction of amprphous C-BN thin films with metals and silicon", 10th International Conference on Thin Films ICTF-10, 5-th European Vacuum Conference EVC-5, Salamanca (Spain), 23-27 September 1996. 12. A. Werbowy, J. Szmidt, A. Jakubowski, A. Sokolowska, "Electrical characteristics of structures with carbon nitride layer as a dielectric", 1st Polish-Korean Symposium on Materials Science", Warsaw (Poland), 16-19 December 1996. 13. J. Szmidt, A. Olszyna, S. Mitura, A. Sokolowska "In situ doping of DLC layers", Diamond and Related Matrials, vol. 5, p. 124 (1996) . 14. J. Szmidt, A. Werbowy, L. Jarzebowski, T. Gebicki, I. Petrakowa, A. Sokolowska, A. Olszyna, "Effect of annealing on the structure and electrical properties of sulphur doped amorphous c-BN layers", Journal of Materials Science, vol.31, p. 2609 (1996) . 15. T. Brozek, T. Dao, C.R. Viswanathan, "A comparison of damage created by chemical downstream etcher and plasma-immersion system in MOS capacitors", Journal of Vacuum Science and Technology (B), vol. 14, No 1, pp. 577-581, (1996). 16. X. Li, T. Brozek, Y.D. Chan, F. Preuninger, C.R. Viswanathan, "Evaluation of plasma damage using fully processed MOS transistors", Journal of Vacuum Science and Technology (B), vol. 14, No 1, pp. 571-576, (1996). 17. T. Brozek, C.R. Viswanathan, "Generation of hole traps in thin solid oxide layers under high-field electron injection", Applied Physic Letters, vol. 68, No.13, pp. 1826-28 (1996). 18. T. Brozek, Y.D. Chan, C.R. Viswanathan, "Temperature accelerated gate oxide degradation under plasma-induced charging", IEEE Electron Dev. Lett., vol. 17, No.6, pp. 288-290 (1996). 19. T. Brozek, Y.D. Chan, C.R. Viswanathan, "Hole traps generation in the gate oxide due to plasma-induced charging", IEEE Electron Dev. Lett., vol. 17, No. 9, pp. 440-442 (1996). 20. T. Brożek, Y.D. Chan, C.R. Viswanathan, "Simple method for evaluating process-induced charging damage", Applied Physic Letters, vol. 69, No.12, pp. 1770-1772 (1996). 21. K. Dmowski, D. Vuillaume, B. Lepley, "A modified method of side data analysis of deep level transient spectroscopy spectra", J. Appl. Phys., vol. 79, p. 1468 (1996) 22. E. Losson, K. Dmowski, B. Lepley, "Practical methods to improve` DLTS spectra smoothing", Phys. Stat. Sol. (a), vol. 156, p. 413 (1996). 23. K. Dmowski, A. Halimaoui, "The influence of quantum effects on the determination of gate oxide thickness from C-V measurements", in Procedings of "French-Italian Symposium Structutre and defects in SiO2. Fundamentals and applications", Agelonde, France, September (1996). 24. F. Ikraiam, R.B. Beck, A. Jakubowski, "The capacitance-voltage behaviour of SOI-MOS thick-body capacitors", Electron Technology, vol. 29, No 4, pp. 365-371, (1996). 25. M. Jurczak, A. Jakubowski, "Improved description of GAA (Gate-All-Around) MOSFET I-V characteristics", Proc. ESSDERC'96, pp. 283-286, Bolonia (Wlochy), (1996).Back to top
1. J. Szmidt, A. Werbowy, A. Michalski, A. Olszyna, A. Sokolowska, S.Mitura, "In-situ doping of a-cBN layers", Diamond and Related Materials", 4 (1995) 1131. 2. S. Mitura, J. Szmidt, A. Sokolowska, "Doping of diamond-like carbon films", M.A. Prelas et al. (eds.), Wide Band Gap Electronic Materials, NATO ASI Series, Kluwer Academic Publishers (1995) 235. 3. J. Konwerska-Hrabowska, K. Zdunek, A. Sokolowska, J. Szmidt, L.Nowicki, "Optical properties of C and N codeposit from an impulse plasma", International Conference on C-BN and Diamond Crystallization under Reduced Pressure C-BN&D'95", Jablonna, June 27-29,1995, to be published in Journal Chemical Vapor Deposition. 4. A. Werbowy, J. Szmidt, A. Sokolowska, A. Olszyna, S. Mitura, "Fabrication and properties of Mo Contacts to amorphous cubik boron nitride (a-cBN) layers", 6th European Conference on Diamond, Diamond-like and Related Materials, Barcelona (Spain), Sept. 10-15, 1995, No 11.073, to be published in Diamond and Related Materials. 5. K. Zdunek, A. Sokolowska, J. Szmidt, A. Werbowy, J. Konwerska-Hrabowska, S. Mitura, "Nanocrystalline C-N thin Films", 6th European Conference on Diamond, Diamond-like and Related Materials, Barcelona (Spain), Sept. 10-15, 1995, No 11.089, to be published in Diamond and Related Materials. 6. L.Lukasiak, A. Jakubowski, "Accuracy verification of series resistance extraction methods", Electron Technology, vol. 28, No 1/2, pp. 61-71, 1995. 7. T. Brozek, R. Wisniewski, R.B. Beck, A. Jakubowski "Effect of radiation on breakdown of electrically predegrated oxides in MOS structures", INFOS'95, Villard-de-lans, France, June 1995, Microelectronics Engineering. 8. B. Majkusiak, T. Janik, "Influence of carrier energy quantization on the gate-induced drain breakdown", Solid-State Electronics, vol. 38, No.11, pp.1933-1936, 1995. 9. B. Majkusiak, "Current multiplication mechanism in the metal-ultrathin (tunnel) oxide-semiconductor transistor structures", Electron Technology, vol. 28, pp. 135-151, 1995. 10. B. Majkusiak, L. Jarzebowski, "Experimental and theoretical study of the amplification and switching action in the MISIM tunnel transistor", 25rd European Solid State Device Research Conference ESSDERC'95 , The Hague (Holandia), Sept. 1995, Proceedings, pp. 655-465. 11. T. Janik, B. Majkusiak, "Modeling of charge distribution in semiconductor surface layer of MOS transistor including quantization of carrier energy", XVIII National Conference CIRCUIT THEORY AND ELECTRONIC CIRCUITS, Szczyrk, Poland, Oct. 1995, Proceedings, pp. 215-220. 12. M.Jurczak, A.Jakubowski, L.Lukasiak, " A review of n-channel SOI transistor models", MIEL'95, Nis, Serbia, 12-14 Sept. 1995, Proceedings, pp.639-644, IEEE; also: Microelectronics Journal (to be published). 13. B. Nowak, A. Jakubowski, R. Gawryć, S. Szostak, "Source unit for characterization of interface states by means of charge-pumping methods", MIEL'95, Proc. Miel, pp. 253-254, IEEE Press, 1995. 14. M.Jurczak, A.Jakubowski, L.Lukasiak, "The comparison of SOI transistor models", (invited paper) Eight International Workshop on Physics of Semiconductor Devices, New Delhi, India, 12-16 Dec. 1995, K. Lal (ed.) "Semiconductor Devices", Narosa Publishing House, New Delhi 1995, pp.11-18. 15. B. Nowak, A. Jakubowski, S. Szostak, R. Gawrys, L. Lukasiak, "Interface trap characterization using charge-pumping method", IWPSD'95, New Delhi, India, 11-16 Dec. 1995, K. Lal (ed.), Semiconductor DevicesÓ, Narosa Publishing House, New Delhi 1995, pp. 541-543. 16. A.Jakubowski, M.Jurczak, L.Lukasiak, "Why SOI?", referat zaproszony na XIX Konferencje Naukowo-Techniczna Sekcji Polskiej ISHM, Porabka Kozubnik, 17-20 wrzesnia 1995 (w przygotowaniu do druku). 17. A.Jakubowski, M.Jurczak, L.Lukasiak, "SOI (silicon on insulator): materials and devices", referat zaproszony na III Seminarium Powierzchnia i Struktury Cienkowarstwowe, Spala 23-26 pazdziernika 1995; Electron Technology (w druku). 18. A. Jakubowski, "Mikroelektronika krzemowa - dokad zmierzamy", Elektronika, t. 36, Nr 2, str. 3-20, 1995. 19. A. Jakubowski, B. Majkusiak, T. Janik, "Pamieci DRAM - zasada dzialania", Elektronika, nr 5, 24-26, 1995. 20. A. Jakubowski, B. Majkusiak, T. Janik, "Pamieci DRAM - tendencje rozwojowe", Elektronika, nr 6, 21-24, 1995. 21. A. Jakubowski, B. Majkusiak, T. Janik, "Zasady dzialania kom—rek pamieci nieulotnych", Elektronika, nr 7, 25-27, 1995. 22. A. Jakubowski, L. Lukasiak, B. Nowak, "Mikroprocesory-tendencje technologiczne", Elektronika, t.36, nr 8, str. 19-21, 1995. 23. A. Jakubowski, B. Nowak, L. Lukasiak, "Mikroprocesory-tendencje architekturalne", Elektronika, t.36, nr 9, str.26-28, 1995. 24. A. Jakubowski, B. Nowak, L. Lukasiak, "Mikrokontrolery", Elektronika, t.36, nr 10, str.19-23, 1995.Back to top
1. K. Dmowski, A. Jakubowski, "Measurements of tunneling emission in Si-SiO2 interfaces by Deep-Level-Transient-Spctroscopy method", Electron Technology, vol. 27, No 1, pp. 65-71, 1994. also in 3-rd Symposium "Diagnostics and Yield - D & Y'94", Warsaw, April 1994. 2. K. Dmowski, A. Jakubowski, "Identification of tunneling emission in Si-SiO2 interfaces by multipoint correlation method with binominal weighting coefficients", J. Appl. Phys., vol. 75, June 1994. 3. T. Brozek, A. Jakubowski, "Charge build-up and oxide wear-out during Fowler-Nordheim electron injection in irradiated MOS structures", Microelectronics Journal, vol. 25, 1994. 4. J. Szmidt, "Selective etching of C-BN layers", Diamond and Related Materials, 3 (1994) 650. 5. J. Szmidt, "Diamondlike layers as passivation coatings for power bipolar transistors", Diamond and Related Materials, 3 (1994) 849. 6. J. Szmidt "Selective etching of C-BN layers", Diamond Films'93, 4th European Conference on Diamond, Diamon-like and Related Materials, Sept. 20-24, 1993, Albufeira, Protugal. Diamond and Related Materials, 3 (1994) 650. 7. J. Szmidt, R.B. Beck, S. Mitura, A. Sokolowska, "Application of diamondlike layers as gate dielectric in MIS transistor", Diamond and Related Materials, 3 (1994) 853. 8. P. Louda, Z. Lisik, E. Mitura, S. Mitura, P. Niedzielski, J. Szmidt, A. Jakubowski "Heat transfer through DLC and PCD layers", ISDF2 Second International Symposium on Diamond Films, Minsk (Bielorussia), 3-5 May 1994. 9. J. Szmidt, A. Jakubowski, S. Mitura, A. Soko¸owska "Warstwy diamentopodobne i diamentowe dla zastosowaÄ elektronicznych", Zaproszony Referat Sekcyjny, Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994, Mat. str. 70-75. 10. J. Szmidt, R.B. Beck, A. Jakubowski, "Technologia wytwarzania struktur mikroelektronicznych z udzialem diamentopodobnych warstw weglowych", Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994. Mat. str. 359-362. 11. S. Mitura, E. Mitura, P. Niedzielski, J. Marciniak, J. Szmidt, M. Clapa, Z. Paszenda, A. Jakubowski, "Technologie wytwarzania amorficznego diamentu - materialy dla zastosowan w medycynie", Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994. Mat. str. 248-251 12. P. Louda, Z. Lisik, E. Mitura, S. Mitura, P. Niedzielski, J. Szmidt, A. Jakubowski "Heat transfer through DLC and PCD layers", 5th European Conference on Diamond, Diamond-like and Related Materials, Il Ciocco, Italy, 25-30 September 1994. 13. R. Beck, A. Jakubowski, M.Jurczak, "Technologia SOI - nadzieja mikroelektroniki krzemowej", (Referat sekcyjny), Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994. Mat. str. 435-439. 14. M. Jurczak, A. Jakubowski, "Analityczny model charakterystyk I-V tranzystora MOS SOI", Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994. str. 566-596. 15. L. Lukasiak, A. Zareba, A. Jakubowski, "Modelowanie charakterystyk I-V tranzystora MOS z uwzglednieniem zmian ruchliwosci nosnik—w ladunku wzdluz kanalu", Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994. Mat. pp. 596-599. 16. B. Nowak, A. Jakubowski, "Interface - trap charge-pumping measurements using threelevel pulsed interface probing", 3-rd Symposium "Diagnostics and Yield - D & Y'94", Warsaw, April 1994. 17. T. Janik, B. Majkusiak, "Influence of carrier energy quantization on threshold voltage of metal-oxide-semiconductor transistor", Journal of Applied Physics, vol. 75, pp. 5186-5190, (1994). 18. T. Janik, B. Majkusiak, "Quantum effects in MOS transistors", Electron Technology, vol.27, pp. 3-27, 1994. 19. T. Janik, B. Majkusiak, "Wplyw kwantowania energii nosnik—w na zjawisko przebicia drenu indukowanego bramka", V Konferencja TECHNOLOGIA ELEKTRONOWA ELTE'94, Szczyrk, kwiecien 1994, Materialy Konferencji, pp. 558-561. 20. B. Majkusiak, T. Janik, "Efekty kwantowe w tranzystorze MOS", referat sekcyjny, V Konferencja TECHNOLOGIA ELEKTRONOWA ELTE'94, Szczyrk, kwiecien 1994. 21. M.Jurczak, "Comparison of the NMRC Device Simulators", report for National Microelectronics National Centre (NMRC), Cork, Ireland, June 1994. 22. M.Jurczak, "Simulation and Fabrication Process of SOI transistors" report for NMRC, Cork, Ireland, Sept. 1994. 23. L. Lukasiak, "Modelowanie statycznych charakterystyk pradowo-napieciowych tranzystora MOS", Ph.D. Thesis, Faculty of Electronics, Warsaw University of Technology, Warsaw, Poland, 1994. 24. J. Szmidt, R.B. Beck, S. Mitura, A. Sokolowska, "Effects of carbon ions on the silicon substrate being coated with DLC by plasma deposition methods", ISDF2 Second International Symposium on Diamond Films, Minsk (Bielorussia), 3-5 May 1994. 25. J. Szmidt, A. Olszyna, S. Mitura, A. Sokolowska, "In situ doping of DLC layers", ISDF2 Second International Symposium on Diamond Films, Minsk (Bielorussia), 3-5 May 1994. 26. S. Mitura, A. Koziarski, A. Sokolowska, J. Szmidt, P. Niedzielski, S.Miklaszewski, "Amorphous diamond coatings for cutting tools", ISDF2 Second International Symposium on Diamond Films, Minsk (Bielorussia), 3-5 May 1994. 27. J. Szmidt, R.B. Beck, S. Mitura, A. Sokolowska, "Wplyw jon—w wegla na podloze krzemowe pokrywane warstwa diametopodobna przy uzyciu technik plazmowych", V Konferencja Naukowa Technologia Elektronowa ELTE'94, Szczyrk 20-23.04, (1994). 28. A. Sokolowska, S. Mitura, J. Szmidt, "Heterojunction with diamond film", 4th European Symposium & Exibition on Semiconductor Engineering and Materials Technology - SET'94, April 25-28, (1994). 29. R.B. Beck, J. Szmidt, "Introduction of diamond-like carbon layers technology to microelectronic structure fabrication", 4th European Symposium & Exibition on Semiconductor Engineering and Materials Technology - SET'94, April 25-28, (1994). 30. A. Werbowy, J. Szmidt, "Some aspects of detailed diagnostics of MIS structures with plasma deposited DLC layers", 3rd Symposium Diagnostics and Yield D&Y'94, April 28-29, (1994). 31. S. Mitura, R. Wolowiec, P. Niedzielski, J. Szmidt, A. Sokolowska, "Characterization of amorphous diamond obtained by RF dense plasma", 8th CIMTEC World Ceramics Congress, Florence, 28.06 Ö 04.07. 1994. 32. J. Szmidt, A. Werbowy, A. Sokolowska, A. Olszyna, A. Michalski, S. Mitura, "Heterojunction C-BN/Si", Diamond Films'94, 5th European Conference on Diamond, Diamond-like and Related Materials, Il Ciocco, Italy, 25-30 September, 1994. 33. P. Louda, Z. Lisik, E. Mitura, S. Mitura, P. Niedzielski, J. Szmidt, A.ĘJakubowski, "Heat transfer through DLC and PCD layers", Diamond Films'94, 5th European Conference on Diamond, Diamond-like and Related Materials, Il Ciocco, Italy, 25-30 September, 1994. 34. P. Niedzielski, A. Koziarski, S. Mitura, A. Sokolowska, J. Szmidt, S.Miklaszewski. "Cutting tools with amorphous carbon", Diamond Films'94, 5th European Conference on Diamond, Diamond-like and Related Materials, Il Ciocco, Italy, 25-30 September, 1994. 35. A. Olszyna, B. Kowalski, J. Szmidt, "Optical properties of E-BN", Diamond and Related Materials, 3 (1994) 840.Back to top
1. L. Lukasiak, A. Jakubowski, "The influence of nonuniform doping profile on I - V characteristics of MOS transistor", IEEE Trans. on Electron Devices, vol. ED-40, No 2, pp. 453-455, Feb. 1993. 2. A. Jakubowski, L.Lukasiak, "The influence of bandgap narrowing on the I-V characteristics of a MOSFET", Solid State Electronics, vol. 36, pp. 1129-1134, 1993. 3. T. Brozek, B. Pesic, A. Jakubowski, "Wear-out properties of irradiated oxides in MOS structures", Microelectronics Journal, vol.24, pp. 381-387, 1993. 4. T. Brozek, B. Pesic, A. Jakubowski, N. Stojadinovic, "Breakdown properties of thin oxides in irradiated MOS capacitors", Microelectronics and Reliability, vol. 33 No.5, pp. 649-657, 1993. 5. T. Brozek, A. Jakubowski, "Dielectric integrity of thin thermal oxides on silicon", (invited paper) Microelectronics and Reliability, vol. 33, No. 11/12, pp. 1637-1656, 1993. 6. M. Jurczak, A. Jakubowski, "An improved analytical description of thin-film SOI MOSFET in the above-threshold region", INFOS'93, Delft, June 2-5, 1993, Microelectronics Engineerings, vol. 22, pp. 395-398, (1993). 7. B. Majkusiak, A. Str—jwas, "Influence of oxide thickness nonuniformities on the tunnel current-voltage and capacitance - voltage characteristics of the metal-oxide-semiconductor system", Journal of Applied Physics, vol.74, pp. 5638-5647, (1993). 8. B. Majkusiak, R.B. Beck, "Electrophysical parameters of the SiO2-Si system at very high temperatures", 23rd European Solid State Device Research Conference ESSDERC'93, Grenoble (France), Sept. 1993, Proceedings, pp.493-496. 9. T. Brozek, J. Szmidt, A. Jakubowski, A. Olszyna "Electrical behaviour and breakdown in plasma deposited cubic BN layers", Diamond FilmsŐ93, "Diamond and Related Materials", 3 (1994) pp. 720-724. also in 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal. 10. E. Mitura, P. Wawrzyniak, G. Rogacki, J. Szmidt, A. Jakubowski, "The properties of DLC layers deposited onto SiO2 aerogel", Diamond FilmsŐ93, "Diamond and Related Materials", 4 (1994) pp.868-870. also in 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal. 11. E. Mitura, S. Mitura, A. Jakubowski, J. Szmidt, A. Sokolowska, P. Louda, J. Marciniak, "Diamond-like carbon coatings for biomedical application", Diamond FilmsŐ93, "Diamond and Related Materials", 3 (1994) pp.896-898. also in 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal; 12. J. Szmidt, "Diamondlike layers as passivation coatings for power bipolar transistors", Diamond FilmsŐ93, 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal. 13. J. Szmidt, R.B. Beck, S. Mitura, A. Sokolowska, "Application of diamond-like layers as gate dielectric in MIS transistor", Diamond FilmsŐ93, 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal. 14. A. Olszyna, B. Kowalski, J. Szmidt, "Optical properties of E-BN", Diamond FilmsŐ93, 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal. 15. B. Pesic, T. Broýek, N. Stojadinovic, A. Jakubowski, "Statistical modelling of multimodal gate oxide breakdown data based on mixed Weibull distributions concept", 4th European Symposium on Reliability of Electron Devices, Bordeaux, Oct. 4-7 1993, Proceedings, pp. 171-176, (1993). 16. L. Lukasiak, "2-D modeling of MNOS structure", report for National Microelectronics Research Centre, Cork, Ireland, 1993.Back to top