Experimental facilities include the Silicon Processing Lab: a very small clean-room facility ("white area" is of the order of 100 m²) of class 1000. The following processes are available in the lab:

 

dielectric layer formation methods

• thermal oxidation (dry and wet)
• plasma anodisation
• oxide deposition (APCVD)
• diamond-like-carbon (DLC) and boron nitride (BN) layer deposition (PECVD)

metallic layers formation by vacuum evaporation from

• resistant sources (Al, Au)
• e-gun (Al, refractory metals)

photolitography (projection 1:1 mask aligner)

wet etching processes (oxides, silicon, Al, DLC,BN)

doping by thermal diffusion (boron and phosphorus)

New cleanroom laboratory

Characterization Lab
Measurement facilities consists of an automatic probe station, an integrated system for estimation of dielectric layer degradation and computer controlled equipment for DC measurements, high-frequency measurements, very small current measurements and charge pumping measurements.