Some recent publications of the Division of Microelectronic and Nanoelectronic Devices
1997
1. L. Lukasiak, A. Jakubowski, M. Jurczak, R.B. Beck, A. Zareba, "SOI and silicon germanium: new materials for silicon microelectronics", 1st Polish-Korean Symposium on Materials, Warsaw, 16-20 Dec.1996. Proceedings, pp. 135-137 (1997). 2. F. Ikraiam, R.B. Beck, A. Jakubowski, "The capacitance-voltage behaviour of SOI-MOS thick-body capacitors", Proc. 8-th Int. Conf. on Microelectronics ICM'96, Kair, p.419-422, grudzien 1996. 3.. J. Gibki, A. Jakubowski, M. Jurczak, "Determination of thickness of gate oxide and active layer in SOI structures from CV measurements", 10th Biennal Conference on Insulating Films on Semiconductors INFOS'97, Stenungsund, Sweden, June1997, in Microelectronic Engineering, vol. 36, n. 1-4, June 1997, pp. 371-373. 4. B. Majkusiak, T. Janik, "Electron energy quantization effects in the very thin film GAA SOI transistor", 10th Biennal Conference on Insulating Films on Semiconductors INFOS'97, Stenungsund, Sweden, June1997, in Microelectronic Engineering, vol. 36, n. 1-4, June 1997, pp. 379-382. 5. B. Majkusiak, J. Walczak, T. Janik, "Consideration of the Semiconductor Thickness Effect on the Electron Effective Mobility in the GAA SOI Transistor", 192nd Meeting of the Electrochem. Soc., Paris, Sept. 1997, in S. Cristoloveanu (ed.) "Silicon-On-Insulator Technology & Devices", Electrochem. Soc. Proc. vol. 97-23, 1997, pp. 301-306. 6. A. Zareba, R.B. Beck, F. Ikraiam and A. Jakubowski, "Characterization of MOS-SOI structures by means of capacitance-voltage measurement analysis", Proceedings of ECS’97 Joint Meeting, pp. 2338-2339, Paris 1997. 7. A. Zareba, F. Ikraiam, R.B. Beck and A. Jakubowski, "Non-equilibrium related effects in MOS-SOI structures capacitance-voltage measurements analysis", Proc. of Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 1997, pp. 1080-1082. 8. M.Jurczak, A.Jakubowski, "Analytical I-V description of thin-film SOI MOSFET with position-dependent mobility model", Proc. of 8th Int. Symp. on "Silicon on insulator - Technology and Devices", 192nd Meeting, the Electrochemical Society, Inc., Paris (1997) 259. 9. M.Jurczak, A.Jakubowski, "An analytical continuous model of fully depleted SOI MOSFET applicable for CAD", Proc. of MIEL'97 conference, Nis 14-17 Sept. 1997, Serbia, Proc. IEEE Press, vol.1 pp.351-354. 10. A. Jakubowski, M.Jurczak, L.Lukasiak, "Modeling and characterization of SOI devices", (invited papers), Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 1997, V. Kumar, S.K. Agarwal (eds.), "Physics of Semiconductor Devices", vol. 2, Narosa Publishing House, pp.1100-1013. 11. J.Gibki, A.Jakubowski, M.Jurczak, D.Tomaszewski, "A comparison of C-V and I-V characteristics of partially depleted gate-controlled diodes", Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 1997, V. Kumar, S.K. Agarwal (eds.), "Physics of Semiconductor Devices", vol. 2, Narosa Publishing House, 1006-1009. 12. D.Tomaszewski, J.Gibki, A.Jakubowski, M.Jurczak, "A Small signal non-quasistatic model of partially depleted SOI-MOSFETs", Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 1997, V. Kumar, S.K. Agarwal (eds.), "Physics of Semiconductor Devices", vol. 2, Narosa Publishing House, pp. 1076-1079. 13. K. Domanski, E. Polrolnik, R.B. Beck, A. Jakubowski, J.K. Zak, "Some issues on controling the morphology of the pores formed in monocrystaline silicon by electrochemical process", Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec.1997, V. Kumar, S.K. Agarwal (eds.), "Physics of Semiconductor Devices", vol. 2, Narosa Publishing House, pp. 628-631. 14. A. Zareba, F. Ikraiam, R.B. Beck, A. Jakubowski, "Non-equilibrium related effects in MOS-SOI structures capacitance-voltage measurements analysis", Ninth International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 1997, V. Kumar, S.K. Agarwal (eds.), "Physics of Semiconductor Devices", vol. 2, Narosa Publishing House, pp. 1080-1082. 15. P.Niedzielski, E.Mitura, M.Dluzniewski, P.Przymusiala, S.Der Sahaguian, E.Staryga, J.Zak, A.Sokolowska, J.Szmidt, A.Stanishevski, J.J.Moll, J.A.Moll, "Comparison of the surface structure of carbon films deposited by different methods", Diamond and Related Materials, 6 (1997) 721. 16. A. Sokolowska, J. Szmidt, J. Konwerska-Hrabowska, A. Werbowy, A. Olszyna, K. Zdunek, S. Mitura, "Allotropic forms of carbon nitride", Diamond Based Composities and Related Materials, M.A. Prelas et al (Eds), NATO ASI Series, Kluwer Academic Publishers, (1997) 151. 17. M. Langer, S. Mitura, J. Szmidt, A. Sokolowska, "Verification of nanocrystalline diamond films quality", Diamond Based Composities and Related Materials, M.A. Prelas et al (Eds), NATO ASI Series, Kluwer Academic Publishers, (1997) 211. 18. S. Mitura, E. Mitura, P. Niedzielski, M. Dluzniewski, E. Staryga, D. Der-Sahaguian, J. Zak, A. Sokolowska, J. Szmidt, A. Stanishevsky, "The surface structure of carbon films deposited by different plasma chemical metods", Diamond Based Composities and Related Materials, M.A. Prelas et al (Eds), NATO ASI Series, Kluwer Academic Publishers, (1997) 219. 19. Z. Lisik, S. Mitura, J. Szmidt, W. Cieplak, "Termiczna optymalizacja konstrukcji przyrz¹dów pó³przewodnikowych mocy z bramk¹ palczast¹", Elektronika, Prace Naukowe, Politechnika £ódzka, zeszyt Nr 2, (1997) 65. 20. S. Mitura, A. Sokolowska, J. Szmidt, "NCD - Nanocrystalline diamond coatings", Poland from Science Industry - Techno Messe Kansai, 12th Technomart Osaka (Japan), 24-26 February 1997. 21. J. Szmidt, A. Werbowy, A. Sokolowska, A. Olszyna, S. Mitura, "Nanocrystalline Wide Band Gap Nitrides for Electronics", Presentation of Innovative Technologies and Products Developed in Polish Scientific Research Centers - INPEX'XIII Invention/New Product Exposition, Pittsburgh (USA), 15-18 May, (1997) and Sympsium: Science-Education-Technology Poland: from Science Industry, Carnegie Mellon University, Pittsburgh (USA), 15-16 May, 1997. 22. S. Mitura, A. Sokolowska, J. Szmidt, "Nanocrystalline diamond coatings", Presentation of Innovative Technologies and Products Developed in Polish Scientific Research Centers - INPEX'XIII Invention/New Product Exposition, Pittsburgh (USA), 15-18 May, (1997) and Sympsium: Science-Education-Technology Poland: from Science Industry, Carnegie Mellon University, Pittsburgh (USA), 15-16 May, 1997. 23. A. Jakubowski, B. Majkusiak, M. Jurczak, J. Gibki, T. Janik, L. Lukasiak, R.B. Beck, „Modeling and characterization of SOI-MOS Devices", Presentation of Innovative Technologies and Products Developed in Polish Scientific Research Centers - INPEX'XIII Invention/New Product Exposition, Pittsburgh (USA), 15-18 May, (1997) and Sympsium: Science-Education-Technology Poland: from Science Industry, Carnegie Mellon University, Pittsburgh (USA), 15-16 May, 1997. 24. A. Jakubowski, B. Majkusiak, M. Jurczak, J. Gibki, T. Janik, L. Lukasiak, R.B. Beck, „Modeling and characterization of SOI-MOS Devices", Poland from Science Industry - Techno Messe Kansai, 12th Technomart Osaka (Japan), 24-26 February 1997.
1996
1. A. Jakubowski, M. Jurczak, L. Lukasiak, "Technologia SOI - marzenie czy rzeczywistosc ?", Elektronika, t. 37, Nr 2, str. 20-22, 1996 2. A. Jakubowski, M. Jurczak, R.B. Beck, L. Lukasiak, "Technologia SOI - materialy", Elektronika, t. 37, Nr 3, str. 22-25, 1996 3. M. Jurczak, A. Jakubowski, L. Lukasiak, "Technologia SOI - przyrzady", Elektronika, t. 37, Nr 4, str. 15-20, 1996 4. E. Mitura, A. Mitura, S. Mitura, P. Niedzielski, J. Bodzenta, J. Mazur, A. Sokolowska, J. Szmidt, A. Olszyna, "Photothermal measurements of thermal conductivity of thin amorphous CxNy films", 3rd International Symposium on Diamond Films ISDF3, St. Petersburg (Russia), 16-19 June 1996. 5. A. Sokolowska, J. Szmidt, S. Mitura, J. Konwerska-Hrabowska, "Allotropic forms of carbon nitride", NATO Advanced Research Workshop on Diamond Based Composites, St. Petersburg (Russia), 19-21 June 1996. 6. S. Mitura, E. Mitura, P. Niedzielski, S. Der Sahaguian, A. Sokolowska, J. Szmidt, A. Stanishevsky, J. Zak, "The surface structure of carbon films deposited by different plasmachemical methods", NATO Advanced Research Workshop on Diamond Based Composites, St. Petersburg (Russia), 19-21 June 1996. 7. M. Langer, S. Mitura, J. Szmidt, A. Sokolowska, "Verification of nanocrystalline diamond films quality", NATO Advanced Research Workshop on Diamond Based Composites, St. Petersburg (Russia), 19-21 June 1996. 8. E. Mitura, A. Mitura, S. Mitura, P. Niedzielski, J. Bodzenta, J. Mazur, A. Sokolowska, J. Szmidt, A. Olszyna, "Photothermal measurements of thermal conductivity of thin amorphous CxNy films", NATO Advanced Research Workshop on Diamond Based Composites, St. Petersburg (Russia), 19-21 June 1996. 9. M. Dluzniewski, E. Mitura, S. Mitura, P. Niedzielski, P. Przymusiala, S. Der-Sahaguian, E. Staryga, J. Zak, A. Sokolowska, J. Szmidt, A. Stanishevsky, J.A. Moll, J.J. Moll, "Comparison of the surface structure of carbon films deposited by different methods", 7th European Conference on Diamond, Diamond-like and Related Materials DIAMOND'96 jointly with 5th International Conference on the New Diamond Science and Technology ICNDST-5. Tours (France), 8-13 September 1996. 10. Z. Lisik, S. Mitura, J. Szmidt, 3-D simulation of gate current distribution in GTO thyristors", ISPS'96, Prague, 11-13 September 1996. 11. A. Sokolowska, A. Olszyna, A. Werbowy, J. Szmidt, "Junction of amprphous C-BN thin films with metals and silicon", 10th International Conference on Thin Films ICTF-10, 5-th European Vacuum Conference EVC-5, Salamanca (Spain), 23-27 September 1996. 12. A. Werbowy, J. Szmidt, A. Jakubowski, A. Sokolowska, "Electrical characteristics of structures with carbon nitride layer as a dielectric", 1st Polish-Korean Symposium on Materials Science", Warsaw (Poland), 16-19 December 1996. 13. J. Szmidt, A. Olszyna, S. Mitura, A. Sokolowska "In situ doping of DLC layers", Diamond and Related Matrials, vol. 5, p. 124 (1996) . 14. J. Szmidt, A. Werbowy, L. Jarzebowski, T. Gebicki, I. Petrakowa, A. Sokolowska, A. Olszyna, "Effect of annealing on the structure and electrical properties of sulphur doped amorphous c-BN layers", Journal of Materials Science, vol.31, p. 2609 (1996) . 15. T. Brozek, T. Dao, C.R. Viswanathan, "A comparison of damage created by chemical downstream etcher and plasma-immersion system in MOS capacitors", Journal of Vacuum Science and Technology (B), vol. 14, No 1, pp. 577-581, (1996). 16. X. Li, T. Brozek, Y.D. Chan, F. Preuninger, C.R. Viswanathan, "Evaluation of plasma damage using fully processed MOS transistors", Journal of Vacuum Science and Technology (B), vol. 14, No 1, pp. 571-576, (1996). 17. T. Brozek, C.R. Viswanathan, "Generation of hole traps in thin solid oxide layers under high-field electron injection", Applied Physic Letters, vol. 68, No.13, pp. 1826-28 (1996). 18. T. Brozek, Y.D. Chan, C.R. Viswanathan, "Temperature accelerated gate oxide degradation under plasma-induced charging", IEEE Electron Dev. Lett., vol. 17, No.6, pp. 288-290 (1996). 19. T. Brozek, Y.D. Chan, C.R. Viswanathan, "Hole traps generation in the gate oxide due to plasma-induced charging", IEEE Electron Dev. Lett., vol. 17, No. 9, pp. 440-442 (1996). 20. T. Bro¿ek, Y.D. Chan, C.R. Viswanathan, "Simple method for evaluating process-induced charging damage", Applied Physic Letters, vol. 69, No.12, pp. 1770-1772 (1996). 21. K. Dmowski, D. Vuillaume, B. Lepley, "A modified method of side data analysis of deep level transient spectroscopy spectra", J. Appl. Phys., vol. 79, p. 1468 (1996) 22. E. Losson, K. Dmowski, B. Lepley, "Practical methods to improve` DLTS spectra smoothing", Phys. Stat. Sol. (a), vol. 156, p. 413 (1996). 23. K. Dmowski, A. Halimaoui, "The influence of quantum effects on the determination of gate oxide thickness from C-V measurements", in Procedings of "French-Italian Symposium Structutre and defects in SiO2. Fundamentals and applications", Agelonde, France, September (1996). 24. F. Ikraiam, R.B. Beck, A. Jakubowski, "The capacitance-voltage behaviour of SOI-MOS thick-body capacitors", Electron Technology, vol. 29, No 4, pp. 365-371, (1996). 25. M. Jurczak, A. Jakubowski, "Improved description of GAA (Gate-All-Around) MOSFET I-V characteristics", Proc. ESSDERC'96, pp. 283-286, Bolonia (Wlochy), (1996).
1995
1. J. Szmidt, A. Werbowy, A. Michalski, A. Olszyna, A. Sokolowska, S.Mitura, "In-situ doping of a-cBN layers", Diamond and Related Materials", 4 (1995) 1131. 2. S. Mitura, J. Szmidt, A. Sokolowska, "Doping of diamond-like carbon films", M.A. Prelas et al. (eds.), Wide Band Gap Electronic Materials, NATO ASI Series, Kluwer Academic Publishers (1995) 235. 3. J. Konwerska-Hrabowska, K. Zdunek, A. Sokolowska, J. Szmidt, L.Nowicki, "Optical properties of C and N codeposit from an impulse plasma", International Conference on C-BN and Diamond Crystallization under Reduced Pressure C-BN&D'95", Jablonna, June 27-29,1995, to be published in Journal Chemical Vapor Deposition. 4. A. Werbowy, J. Szmidt, A. Sokolowska, A. Olszyna, S. Mitura, "Fabrication and properties of Mo Contacts to amorphous cubik boron nitride (a-cBN) layers", 6th European Conference on Diamond, Diamond-like and Related Materials, Barcelona (Spain), Sept. 10-15, 1995, No 11.073, to be published in Diamond and Related Materials. 5. K. Zdunek, A. Sokolowska, J. Szmidt, A. Werbowy, J. Konwerska-Hrabowska, S. Mitura, "Nanocrystalline C-N thin Films", 6th European Conference on Diamond, Diamond-like and Related Materials, Barcelona (Spain), Sept. 10-15, 1995, No 11.089, to be published in Diamond and Related Materials. 6. L.Lukasiak, A. Jakubowski, "Accuracy verification of series resistance extraction methods", Electron Technology, vol. 28, No 1/2, pp. 61-71, 1995. 7. T. Brozek, R. Wisniewski, R.B. Beck, A. Jakubowski "Effect of radiation on breakdown of electrically predegrated oxides in MOS structures", INFOS'95, Villard-de-lans, France, June 1995, Microelectronics Engineering. 8. B. Majkusiak, T. Janik, "Influence of carrier energy quantization on the gate-induced drain breakdown", Solid-State Electronics, vol. 38, No.11, pp.1933-1936, 1995. 9. B. Majkusiak, "Current multiplication mechanism in the metal-ultrathin (tunnel) oxide-semiconductor transistor structures", Electron Technology, vol. 28, pp. 135-151, 1995. 10. B. Majkusiak, L. Jarzebowski, "Experimental and theoretical study of the amplification and switching action in the MISIM tunnel transistor", 25rd European Solid State Device Research Conference ESSDERC'95 , The Hague (Holandia), Sept. 1995, Proceedings, pp. 655-465. 11. T. Janik, B. Majkusiak, "Modeling of charge distribution in semiconductor surface layer of MOS transistor including quantization of carrier energy", XVIII National Conference CIRCUIT THEORY AND ELECTRONIC CIRCUITS, Szczyrk, Poland, Oct. 1995, Proceedings, pp. 215-220. 12. M.Jurczak, A.Jakubowski, L.Lukasiak, " A review of n-channel SOI transistor models", MIEL'95, Nis, Serbia, 12-14 Sept. 1995, Proceedings, pp.639-644, IEEE; also: Microelectronics Journal (to be published). 13. B. Nowak, A. Jakubowski, R. Gawryæ, S. Szostak, "Source unit for characterization of interface states by means of charge-pumping methods", MIEL'95, Proc. Miel, pp. 253-254, IEEE Press, 1995. 14. M.Jurczak, A.Jakubowski, L.Lukasiak, "The comparison of SOI transistor models", (invited paper) Eight International Workshop on Physics of Semiconductor Devices, New Delhi, India, 12-16 Dec. 1995, K. Lal (ed.) "Semiconductor Devices", Narosa Publishing House, New Delhi 1995, pp.11-18. 15. B. Nowak, A. Jakubowski, S. Szostak, R. Gawrys, L. Lukasiak, "Interface trap characterization using charge-pumping method", IWPSD'95, New Delhi, India, 11-16 Dec. 1995, K. Lal (ed.), Semiconductor DevicesÓ, Narosa Publishing House, New Delhi 1995, pp. 541-543. 16. A.Jakubowski, M.Jurczak, L.Lukasiak, "Why SOI?", referat zaproszony na XIX Konferencje Naukowo-Techniczna Sekcji Polskiej ISHM, Porabka Kozubnik, 17-20 wrzesnia 1995 (w przygotowaniu do druku). 17. A.Jakubowski, M.Jurczak, L.Lukasiak, "SOI (silicon on insulator): materials and devices", referat zaproszony na III Seminarium Powierzchnia i Struktury Cienkowarstwowe, Spala 23-26 pazdziernika 1995; Electron Technology (w druku). 18. A. Jakubowski, "Mikroelektronika krzemowa - dokad zmierzamy", Elektronika, t. 36, Nr 2, str. 3-20, 1995. 19. A. Jakubowski, B. Majkusiak, T. Janik, "Pamieci DRAM - zasada dzialania", Elektronika, nr 5, 24-26, 1995. 20. A. Jakubowski, B. Majkusiak, T. Janik, "Pamieci DRAM - tendencje rozwojowe", Elektronika, nr 6, 21-24, 1995. 21. A. Jakubowski, B. Majkusiak, T. Janik, "Zasady dzialania kom—rek pamieci nieulotnych", Elektronika, nr 7, 25-27, 1995. 22. A. Jakubowski, L. Lukasiak, B. Nowak, "Mikroprocesory-tendencje technologiczne", Elektronika, t.36, nr 8, str. 19-21, 1995. 23. A. Jakubowski, B. Nowak, L. Lukasiak, "Mikroprocesory-tendencje architekturalne", Elektronika, t.36, nr 9, str.26-28, 1995. 24. A. Jakubowski, B. Nowak, L. Lukasiak, "Mikrokontrolery", Elektronika, t.36, nr 10, str.19-23, 1995.
1994
1. K. Dmowski, A. Jakubowski, "Measurements of tunneling emission in Si-SiO2 interfaces by Deep-Level-Transient-Spctroscopy method", Electron Technology, vol. 27, No 1, pp. 65-71, 1994. also in 3-rd Symposium "Diagnostics and Yield - D & Y'94", Warsaw, April 1994. 2. K. Dmowski, A. Jakubowski, "Identification of tunneling emission in Si-SiO2 interfaces by multipoint correlation method with binominal weighting coefficients", J. Appl. Phys., vol. 75, June 1994. 3. T. Brozek, A. Jakubowski, "Charge build-up and oxide wear-out during Fowler-Nordheim electron injection in irradiated MOS structures", Microelectronics Journal, vol. 25, 1994. 4. J. Szmidt, "Selective etching of C-BN layers", Diamond and Related Materials, 3 (1994) 650. 5. J. Szmidt, "Diamondlike layers as passivation coatings for power bipolar transistors", Diamond and Related Materials, 3 (1994) 849. 6. J. Szmidt "Selective etching of C-BN layers", Diamond Films'93, 4th European Conference on Diamond, Diamon-like and Related Materials, Sept. 20-24, 1993, Albufeira, Protugal. Diamond and Related Materials, 3 (1994) 650. 7. J. Szmidt, R.B. Beck, S. Mitura, A. Sokolowska, "Application of diamondlike layers as gate dielectric in MIS transistor", Diamond and Related Materials, 3 (1994) 853. 8. P. Louda, Z. Lisik, E. Mitura, S. Mitura, P. Niedzielski, J. Szmidt, A. Jakubowski "Heat transfer through DLC and PCD layers", ISDF2 Second International Symposium on Diamond Films, Minsk (Bielorussia), 3-5 May 1994. 9. J. Szmidt, A. Jakubowski, S. Mitura, A. Soko¸owska "Warstwy diamentopodobne i diamentowe dla zastosowaÄ elektronicznych", Zaproszony Referat Sekcyjny, Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994, Mat. str. 70-75. 10. J. Szmidt, R.B. Beck, A. Jakubowski, "Technologia wytwarzania struktur mikroelektronicznych z udzialem diamentopodobnych warstw weglowych", Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994. Mat. str. 359-362. 11. S. Mitura, E. Mitura, P. Niedzielski, J. Marciniak, J. Szmidt, M. Clapa, Z. Paszenda, A. Jakubowski, "Technologie wytwarzania amorficznego diamentu - materialy dla zastosowan w medycynie", Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994. Mat. str. 248-251 12. P. Louda, Z. Lisik, E. Mitura, S. Mitura, P. Niedzielski, J. Szmidt, A. Jakubowski "Heat transfer through DLC and PCD layers", 5th European Conference on Diamond, Diamond-like and Related Materials, Il Ciocco, Italy, 25-30 September 1994. 13. R. Beck, A. Jakubowski, M.Jurczak, "Technologia SOI - nadzieja mikroelektroniki krzemowej", (Referat sekcyjny), Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994. Mat. str. 435-439. 14. M. Jurczak, A. Jakubowski, "Analityczny model charakterystyk I-V tranzystora MOS SOI", Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994. str. 566-596. 15. L. Lukasiak, A. Zareba, A. Jakubowski, "Modelowanie charakterystyk I-V tranzystora MOS z uwzglednieniem zmian ruchliwosci nosnik—w ladunku wzdluz kanalu", Proceeding of 5th Conference on Electron Technology ELTE'94, Szczyrk (Poland), 20-23 April 1994. Mat. pp. 596-599. 16. B. Nowak, A. Jakubowski, "Interface - trap charge-pumping measurements using threelevel pulsed interface probing", 3-rd Symposium "Diagnostics and Yield - D & Y'94", Warsaw, April 1994. 17. T. Janik, B. Majkusiak, "Influence of carrier energy quantization on threshold voltage of metal-oxide-semiconductor transistor", Journal of Applied Physics, vol. 75, pp. 5186-5190, (1994). 18. T. Janik, B. Majkusiak, "Quantum effects in MOS transistors", Electron Technology, vol.27, pp. 3-27, 1994. 19. T. Janik, B. Majkusiak, "Wplyw kwantowania energii nosnik—w na zjawisko przebicia drenu indukowanego bramka", V Konferencja TECHNOLOGIA ELEKTRONOWA ELTE'94, Szczyrk, kwiecien 1994, Materialy Konferencji, pp. 558-561. 20. B. Majkusiak, T. Janik, "Efekty kwantowe w tranzystorze MOS", referat sekcyjny, V Konferencja TECHNOLOGIA ELEKTRONOWA ELTE'94, Szczyrk, kwiecien 1994. 21. M.Jurczak, "Comparison of the NMRC Device Simulators", report for National Microelectronics National Centre (NMRC), Cork, Ireland, June 1994. 22. M.Jurczak, "Simulation and Fabrication Process of SOI transistors" report for NMRC, Cork, Ireland, Sept. 1994. 23. L. Lukasiak, "Modelowanie statycznych charakterystyk pradowo-napieciowych tranzystora MOS", Ph.D. Thesis, Faculty of Electronics, Warsaw University of Technology, Warsaw, Poland, 1994. 24. J. Szmidt, R.B. Beck, S. Mitura, A. Sokolowska, "Effects of carbon ions on the silicon substrate being coated with DLC by plasma deposition methods", ISDF2 Second International Symposium on Diamond Films, Minsk (Bielorussia), 3-5 May 1994. 25. J. Szmidt, A. Olszyna, S. Mitura, A. Sokolowska, "In situ doping of DLC layers", ISDF2 Second International Symposium on Diamond Films, Minsk (Bielorussia), 3-5 May 1994. 26. S. Mitura, A. Koziarski, A. Sokolowska, J. Szmidt, P. Niedzielski, S.Miklaszewski, "Amorphous diamond coatings for cutting tools", ISDF2 Second International Symposium on Diamond Films, Minsk (Bielorussia), 3-5 May 1994. 27. J. Szmidt, R.B. Beck, S. Mitura, A. Sokolowska, "Wplyw jon—w wegla na podloze krzemowe pokrywane warstwa diametopodobna przy uzyciu technik plazmowych", V Konferencja Naukowa Technologia Elektronowa ELTE'94, Szczyrk 20-23.04, (1994). 28. A. Sokolowska, S. Mitura, J. Szmidt, "Heterojunction with diamond film", 4th European Symposium & Exibition on Semiconductor Engineering and Materials Technology - SET'94, April 25-28, (1994). 29. R.B. Beck, J. Szmidt, "Introduction of diamond-like carbon layers technology to microelectronic structure fabrication", 4th European Symposium & Exibition on Semiconductor Engineering and Materials Technology - SET'94, April 25-28, (1994). 30. A. Werbowy, J. Szmidt, "Some aspects of detailed diagnostics of MIS structures with plasma deposited DLC layers", 3rd Symposium Diagnostics and Yield D&Y'94, April 28-29, (1994). 31. S. Mitura, R. Wolowiec, P. Niedzielski, J. Szmidt, A. Sokolowska, "Characterization of amorphous diamond obtained by RF dense plasma", 8th CIMTEC World Ceramics Congress, Florence, 28.06 Ö 04.07. 1994. 32. J. Szmidt, A. Werbowy, A. Sokolowska, A. Olszyna, A. Michalski, S. Mitura, "Heterojunction C-BN/Si", Diamond Films'94, 5th European Conference on Diamond, Diamond-like and Related Materials, Il Ciocco, Italy, 25-30 September, 1994. 33. P. Louda, Z. Lisik, E. Mitura, S. Mitura, P. Niedzielski, J. Szmidt, A.ÊJakubowski, "Heat transfer through DLC and PCD layers", Diamond Films'94, 5th European Conference on Diamond, Diamond-like and Related Materials, Il Ciocco, Italy, 25-30 September, 1994. 34. P. Niedzielski, A. Koziarski, S. Mitura, A. Sokolowska, J. Szmidt, S.Miklaszewski. "Cutting tools with amorphous carbon", Diamond Films'94, 5th European Conference on Diamond, Diamond-like and Related Materials, Il Ciocco, Italy, 25-30 September, 1994. 35. A. Olszyna, B. Kowalski, J. Szmidt, "Optical properties of E-BN", Diamond and Related Materials, 3 (1994) 840.
1993
1. L. Lukasiak, A. Jakubowski, "The influence of nonuniform doping profile on I - V characteristics of MOS transistor", IEEE Trans. on Electron Devices, vol. ED-40, No 2, pp. 453-455, Feb. 1993. 2. A. Jakubowski, L.Lukasiak, "The influence of bandgap narrowing on the I-V characteristics of a MOSFET", Solid State Electronics, vol. 36, pp. 1129-1134, 1993. 3. T. Brozek, B. Pesic, A. Jakubowski, "Wear-out properties of irradiated oxides in MOS structures", Microelectronics Journal, vol.24, pp. 381-387, 1993. 4. T. Brozek, B. Pesic, A. Jakubowski, N. Stojadinovic, "Breakdown properties of thin oxides in irradiated MOS capacitors", Microelectronics and Reliability, vol. 33 No.5, pp. 649-657, 1993. 5. T. Brozek, A. Jakubowski, "Dielectric integrity of thin thermal oxides on silicon", (invited paper) Microelectronics and Reliability, vol. 33, No. 11/12, pp. 1637-1656, 1993. 6. M. Jurczak, A. Jakubowski, "An improved analytical description of thin-film SOI MOSFET in the above-threshold region", INFOS'93, Delft, June 2-5, 1993, Microelectronics Engineerings, vol. 22, pp. 395-398, (1993). 7. B. Majkusiak, A. Str—jwas, "Influence of oxide thickness nonuniformities on the tunnel current-voltage and capacitance - voltage characteristics of the metal-oxide-semiconductor system", Journal of Applied Physics, vol.74, pp. 5638-5647, (1993). 8. B. Majkusiak, R.B. Beck, "Electrophysical parameters of the SiO2-Si system at very high temperatures", 23rd European Solid State Device Research Conference ESSDERC'93, Grenoble (France), Sept. 1993, Proceedings, pp.493-496. 9. T. Brozek, J. Szmidt, A. Jakubowski, A. Olszyna "Electrical behaviour and breakdown in plasma deposited cubic BN layers", Diamond FilmsÕ93, "Diamond and Related Materials", 3 (1994) pp. 720-724. also in 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal. 10. E. Mitura, P. Wawrzyniak, G. Rogacki, J. Szmidt, A. Jakubowski, "The properties of DLC layers deposited onto SiO2 aerogel", Diamond FilmsÕ93, "Diamond and Related Materials", 4 (1994) pp.868-870. also in 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal. 11. E. Mitura, S. Mitura, A. Jakubowski, J. Szmidt, A. Sokolowska, P. Louda, J. Marciniak, "Diamond-like carbon coatings for biomedical application", Diamond FilmsÕ93, "Diamond and Related Materials", 3 (1994) pp.896-898. also in 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal; 12. J. Szmidt, "Diamondlike layers as passivation coatings for power bipolar transistors", Diamond FilmsÕ93, 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal. 13. J. Szmidt, R.B. Beck, S. Mitura, A. Sokolowska, "Application of diamond-like layers as gate dielectric in MIS transistor", Diamond FilmsÕ93, 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal. 14. A. Olszyna, B. Kowalski, J. Szmidt, "Optical properties of E-BN", Diamond FilmsÕ93, 4th European Conference on Diamond, Diamond-like and Related Materials, Sept. 20-24, 1993, Albufeira, Portugal. 15. B. Pesic, T. Broýek, N. Stojadinovic, A. Jakubowski, "Statistical modelling of multimodal gate oxide breakdown data based on mixed Weibull distributions concept", 4th European Symposium on Reliability of Electron Devices, Bordeaux, Oct. 4-7 1993, Proceedings, pp. 171-176, (1993). 16. L. Lukasiak, "2-D modeling of MNOS structure", report for National Microelectronics Research Centre, Cork, Ireland, 1993.